50-Gb/s Silicon Optical Modulator

Thomson, David J.; Gardes, Frederic Y.; Fédéli, J-M.; Zlatanovic, Sanja; Hu, Y.; Kuo, Bill P.-P.; Myslivets, Evgeny; Alić, N.; Radic, S.; Mashanovich, Goran Z.; Reed, Graham T.

doi:10.1109/lpt.2011.2177081

Cited by 381 publications

(190 citation statements)

References 21 publications

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“…Numerous works on such modulators have been reported, a review of which can be found elsewhere [139]. Although Si optical modulators with adequately high bit rate (∼50 Gb/s) and low half-voltage length-product V π .L (∼2.8 V.cm) have been reported in MZIs, the devices only offer modest (3-5.5 dB) of modulation depth or extinction ratio [140,141]. Such low modulation depth may be enough for near-term very short-haul links but this certainly remains a shortcoming for the long-term requirements of the industry, where at least 7 dB of modulation depth at high speeds is demanded [139].…”

Section: Second-order Nonlinear Photonics On Siliconmentioning

confidence: 99%

Emerging heterogeneous integrated photonic platforms on silicon

Fathpour

2015

Nanophotonics

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Silicon photonics has been established as a mature and promising technology for optoelectronic integrated circuits, mostly based on the silicon-on-insulator (SOI) waveguide platform. However, not all optical functionalities can be satisfactorily achieved merely based on silicon, in general, and on the SOI platform, in particular. Long-known shortcomings of silicon-based integrated photonics are optical absorption (in the telecommunication wavelengths) and feasibility of electrically-injected lasers (at least at room temperature). More recently, high two-photon and free-carrier absorptions required at high optical intensities for third-order optical nonlinear effects, inherent lack of second-order optical nonlinearity, low extinction ratio of modulators based on the freecarrier plasma effect, and the loss of the buried oxide layer of the SOI waveguides at mid-infrared wavelengths have been recognized as other shortcomings. Accordingly, several novel waveguide platforms have been developing to address these shortcomings of the SOI platform. Most of these emerging platforms are based on heterogeneous integration of other material systems on silicon substrates, and in some cases silicon is integrated on other substrates. Germanium and its binary alloys with silicon, III-V compound semiconductors, silicon nitride, tantalum pentoxide and other high-index dielectric or glass materials, as well as lithium niobate are some of the materials heterogeneously integrated on silicon substrates. The materials are typically integrated by a variety of epitaxial growth, bonding, ion implantation and slicing, etch back, spin-on-glass or other techniques. These wide range of efforts are reviewed here holistically to stress that there is no pure silicon or even group IV photonics per se. Rather, the future of the field of integrated photonics appears to be one of heterogenization, where a variety of different materials and waveguide platforms will be used for different purposes with the common feature of integrating them on a single substrate, most notably silicon.

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Section: Second-order Nonlinear Photonics On Siliconmentioning

confidence: 99%

Emerging heterogeneous integrated photonic platforms on silicon

Fathpour

2015

Nanophotonics

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“…Silicon photonics is the most promising platform for such integration, however is limited by the lack of efficient light emitter and modulator compatible with traditional complementary metal-oxide-semiconductor (CMOS) technology. Several schemes of silicon modulators have been proposed based on plasma dispersion effect, including carrier injection, 1-3 depletion [4][5][6] and accumulation. 7,8 The V π L figure of merits are measured ranging from 0.036 to 4 V·cm under different bias conditions, and still require to be improved to satisfy a large number of applications in fields of optoelectronic information.…”

Section: Introductionmentioning

confidence: 99%

Design of low bias voltage Ge/SiGe multiple quantum wells electro-absorption modulator at 1550 nm

et al. 2017

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We design and simulate a Ge/SiGe multiple quantum wells (MQWs) modulator based on quantum confined Stark effect (QCSE) that operates at 1550 nm. By introducing a thick well and thin barrier in multiple quantum wells structure, the compressive strain of the Ge well is reduced and the absorption edge is shifted to the longer wavelength. An 8-band k⋅p model is employed to calculate the eigenstates and absorption spectra, and influences of quantum well parameters on the absorption property is analyzed and discussed. The numerical simulation indicates that the bias voltage is remarkably reduced to 0.5 V with 1 V voltage swing for 10 wells, while still maintaining over 5 dB absorption contrast ratio. The proposed Ge/SiGe modulator can be a potential approach compatible with traditional complementary metal-oxide-semiconductor (CMOS) technology and adoptable for integration with electronic components.

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“…The modulation energy per bit is usually in the pJrange due to the forward bias of the diode. Carrier depletion modulators, in contrast, have been demonstrated to operate at data rates of up to 50 Gbit/s [5], but typically with π V L > 10 Vmm for non-resonant devices. Extinction ratios (ER) range from 3 dB to 8 dB at high data rates, and the lowest reported energy consumption is 200 fJ/bit [6].…”

Section: Introductionmentioning

confidence: 99%

“…At 12. 5 Gbit/s we demonstrate data transmission with record-low peak-to-peak drive voltages of 125 mV pp , corresponding to an energy consumption of 1.6 fJ/bit. This is, to the best of our knowledge, the lowest energy consumption reported so far for siliconbased MZI modulators, a value that compares well even with best-in-class resonant devices.…”

Section: Introductionmentioning

confidence: 99%

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High-Speed Silicon-Organic Hybrid (SOH) Modulator with 1.6 fJ/bit and 180 pm/V In-Device Nonlinearity

Palmer¹,

Koeber²,

Heni³

et al. 2013

39th European Conference and Exhibition on Optical Communication (ECOC 2013)

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We report on a 40 Gbit/s silicon-organic hybrid (SOH) modulator with 11 dB extinction ratio.A novel electro-optic chromophore with record in-device nonlinearity of 180 pm/V leads to V  L = 0.5 Vmm and a low energy consumption of 1.6 fJ/bit at 12.5 Gbit/s. IntroductionEnergy-efficient silicon electro-optic modulators are key components for future short-distance interconnects in data centers and highperformance computers [1]. Targeted energy consumptions are tens of fJ/bit for dense offchip connections, and a few fJ/bit for global onchip connections [1]. Over the last years, a variety of silicon modulators has been demonstrated based on free-carrier depletion, or injection in pn-diodes, or based on metal-oxidesemiconductor (MOS) structures [2,3]. Carrier injection devices have typically very small voltage-length products of π V L = 0.36 V mm [4], but the large carrier lifetime calls for pre-emphasis and limits the modulation speed to 20 GHz. The modulation energy per bit is usually in the pJrange due to the forward bias of the diode. Carrier depletion modulators, in contrast, have been demonstrated to operate at data rates of up to 50 Gbit/s [5], but typically with

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50-Gb/s Silicon Optical Modulator

Cited by 381 publications

References 21 publications

Emerging heterogeneous integrated photonic platforms on silicon

Emerging heterogeneous integrated photonic platforms on silicon

Design of low bias voltage Ge/SiGe multiple quantum wells electro-absorption modulator at 1550 nm

High-Speed Silicon-Organic Hybrid (SOH) Modulator with 1.6 fJ/bit and 180 pm/V In-Device Nonlinearity

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