High-speed modulation of a compact silicon ring resonator based on a reverse-biased pn diode

Gardes, Frederic Y.; Brimont, A.; Sanchís, Pablo; Rasigade, G.; Marris‐Morini, Delphine; О’Faolain, L.; Dong, Fangfang; Fédéli, J-M.; Dumon, Pieter; Vivien, Laurent; Krauss, Thomas F.; Reed, GT; Martí, J.

doi:10.1364/oe.17.021986

Cited by 165 publications

(82 citation statements)

References 11 publications

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“…The first designs of this type were demonstrated in 2008 [21][22][23], and since then there have been numerous versions published with different variants in the design [24][25][26][27][28][29][30][31][33][34][35][36][37]. The most straightforward form of the device has the pn junction positioned in the waveguide equidistant from the rib edges [25][26][27][28][29][30][31][32].…”

Section: Chirpmentioning

confidence: 99%

Recent breakthroughs in carrier depletion based silicon optical modulators

et al. 2014

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Abstract:The majority of the most successful optical modulators in silicon demonstrated in recent years operate via the plasma dispersion effect and are more specifically based upon free carrier depletion in a silicon rib waveguide. In this work we overview the different types of free carrier depletion type optical modulators in silicon. A summary of some recent example devices for each configuration is then presented together with the performance that they have achieved. Finally an insight into some current research trends involving silicon based optical modulators is provided including integration, operation in the mid-infrared wavelength range and application in short and long haul data transmission links.

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Section: Chirpmentioning

confidence: 99%

Recent breakthroughs in carrier depletion based silicon optical modulators

et al. 2014

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“…Therefore we have investigated the resistance of shallow trenches ͑etch depth= 135 nm, i.e., 85 nm remaining, and different lengths͒ typically used to define rib waveguide based ring resonators. 11 The values of ␦ were determined from the slope of a resistance-width plot, but ␦ now refers to the surface rather than the sidewall depletion layer. As shown in Fig.…”

Section: Electrical Conduction and Optical Properties Of Doped Silicomentioning

confidence: 99%

Electrical conduction and optical properties of doped silicon-on-insulator photonic crystals

Cardile

Franzò

Savio

et al. 2011

Applied Physics Letters

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We investigate the electrical properties of silicon-on-insulator (SOI) photonic crystals as a function of both doping level and air filling factor. The resistance trends can be clearly explained by the presence of a depletion region around the sidewalls of the holes that is caused by band pinning at the surface. To understand the trade-off between the carrier transport and the optical losses due to free electrons in the doped SOI, we also measured the resonant modes of L3 photonic crystal nanocavities and found that surprisingly high doping levels, up to 1018/cm3, are acceptable for practical devices with Q factors as high as 4×104.

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“…Its position is critical to the performance of modulator since the frequency response is limited by the RC cut off frequency resulting from capacitive effects within the junction and the resistance of the doped regions and metal contacts [21]. Then the sample was covered by a 1.1 μm thick SiO2 layer using plasma-enhanced chemical vapor deposition (PECVD), see Figure 5(d).…”

Section: Fig 5 Fabrication Process Of Modulatormentioning

confidence: 99%

Fabrication of depletion type micro-ring modulator with high extinction ratio and high coupling quality factor

et al. 2017

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Abstract. We experimentally demonstrate an optical micro-ring modulator based on a reverse-biased PN junction which is integrated into a silicon-on-insulator (SOI) rib waveguide. The performance of micro-ring resonator with different sizes is simulated with Lumerical MODE Solutions. The fabricated device provides a high extinction ratio (ER) of 20 4 . Modulation rate is higher than 11 Gbit/s with only 2 V peak-to-peak (Vpp) driving voltage. The theoretical modulation rate can be higher than 25 Gbit/s by the optimizing the matching resistor and the test system.

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High-speed modulation of a compact silicon ring resonator based on a reverse-biased pn diode

Abstract: High speed modulation based on a compact silicon ring resonator operating in depletion mode is demonstrated. The device exhibits an electrical small signal bandwidth of 19 GHz. The device is therefore a candidate for highly compact, wide bandwidth modulators for a variety of applications.

Cited by 165 publications

References 11 publications

Recent breakthroughs in carrier depletion based silicon optical modulators

Recent breakthroughs in carrier depletion based silicon optical modulators

Electrical conduction and optical properties of doped silicon-on-insulator photonic crystals

Fabrication of depletion type micro-ring modulator with high extinction ratio and high coupling quality factor

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