Recent breakthroughs in carrier depletion based silicon optical modulators

Reed, Graham T.; Mashanovich, Goran Z.; Gardes, Frederic Y.; Nedeljkovic, Milos; Hu, Y.; Thomson, David J.; Li, Ke; Wilson, Peter; Chen, Sheng-Wen; Hsu, Shawn S. H.

doi:10.1515/nanoph-2013-0016

Cited by 187 publications

(116 citation statements)

References 80 publications

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“…Ideally we would compare our experimental results with the theoretical analysis of [22]. However, calculations based on the analysis suggest that the free carrier densities achieved over the injection currents used in this work are approximately 1x10 17 cm −3 , which is out of the range of the minimum densities used to develop the expressions in [22] (3.2x10 17 cm −3 and 5x10 17 cm −3 for electrons and holes, respectively). According to the theory, with an injected electron and hole density of 1x10 17 cm −3 the attenuation in dB achieved at 1.55μm, 2μm and 2.5μm is 1.7, 2.9 and 3.7 times more than the attenuation at 1.3μm, whereas according to the experimental results of Fig.…”

Section: Modulationmentioning

confidence: 90%

“…The attraction of the plasma dispersion effect is the combination of CMOS compatibility, achievable performance and fabrication simplicity. At 1.3µm and 1.55µm a large number of plasma dispersion effect modulators have been demonstrated with impressive results [17]. To date there has been very little work on plasma dispersion effect modulators at MIR wavelengths, although a theoretical analysis [22] and one experimental demonstration at 2.165μm [9] have been published.…”

Section: Modulationmentioning

confidence: 99%

“…Alternative methods that can be extended beyond 2μm include III-V on silicon detectors [14], graphene on silicon [15], and defect based detectors [16], where the latter approaches have the advantage of CMOS compatibility. In terms of modulation, high speed optical modulators in the NIR have typically made use of the plasma dispersion effect [17], although approaches based upon the hybridisation of other materials such as III-V [18], germanium [19], graphene [20] and polymers [21] have also been successfully demonstrated. However, to date, little work has been done to achieve optical modulation in the 2-3μm band [9,22].…”

Section: Introductionmentioning

confidence: 99%

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Optical detection and modulation at 2µm-25µm in silicon

et al. 2014

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Abstract:Recently the 2μm wavelength region has emerged as an exciting prospect for the next generation of telecommunications. In this paper we experimentally characterise silicon based plasma dispersion effect optical modulation and defect based photodetection in the 2-2.5μm wavelength range. It is shown that the effectiveness of the plasma dispersion effect is dramatically increased in this wavelength window as compared to the traditional telecommunications wavelengths of 1.3μm and 1.55μm. Experimental results from the defect based photodetectors show that detection is achieved in the 2-2.5μm wavelength range, however the responsivity is reduced as the wavelength is increased away from 1.55μm. Kaertner, and T. M. Lyszczarz, "CMOS-compatible all-Si high-speed waveguide photodiodes with high responsivity in near-infrared communication band," IEEE Photon.

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Section: Modulationmentioning

confidence: 90%

Section: Modulationmentioning

confidence: 99%

Section: Introductionmentioning

confidence: 99%

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Optical detection and modulation at 2µm-25µm in silicon

et al. 2014

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“…The power consumption is given in energy-per-bit and estimated from E pb = C j V 2 s /4 = 53 fJ/bit [23], with a voltage swing of V s = 1.5 V. This is higher than 12.8 fJ/bit in [4]. The energy usage is proportional to the junction capacitance, and shortening the device would therefore lower energy usage at the cost of a lower ER.…”

Section: B Electrical Performancementioning

confidence: 99%

A Novel Broadband Electro-Absorption Modulator Based on Bandfilling in n-InGaAs: Design and Simulations

Engelen

Shen

Roelkens

et al. 2018

IEEE J. Select. Topics Quantum Electron.

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• A submitted manuscript is the version of the article upon submission and before peer-review. There can be important differences between the submitted version and the official published version of record. People interested in the research are advised to contact the author for the final version of the publication, or visit the DOI to the publisher's website.• The final author version and the galley proof are versions of the publication after peer review.• The final published version features the final layout of the paper including the volume, issue and page numbers. Link to publication General rightsCopyright and moral rights for the publications made accessible in the public portal are retained by the authors and/or other copyright owners and it is a condition of accessing publications that users recognise and abide by the legal requirements associated with these rights.• Users may download and print one copy of any publication from the public portal for the purpose of private study or research.• You may not further distribute the material or use it for any profit-making activity or commercial gain • You may freely distribute the URL identifying the publication in the public portal.If the publication is distributed under the terms of Article 25fa of the Dutch Copyright Act, indicated by the "Taverne" license above, please follow below link for the End User Agreement: www.tue.nl/taverne Take down policyIf you believe that this document breaches copyright please contact us at:openaccess@tue.nl providing details and we will investigate your claim. Abstract-We propose and evaluate by simulation a novel membrane electro-absorption modulator heterogeneously integrated on silicon. The device is based on the electronconcentration dependent absorption of highly-doped n-InGaAs. It is predicted that the modulator can be operated over a wavelength range of more than 100 nm and provides a static extinction ratio of 7.2 dB, an insertion loss of 4.4 dB, a modulation speed above 50 Gbit/s and a power consumption of 53 fJ/bit. The modulator has a small footprint of 0.4 × 80 um 2 (excluding contact pads) and operates on a CMOS compatible 1.5 V voltage swing.

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“…Key components of a silicon photonics interconnect are modulators and photodetectors, and tremendous progress has been made in the realisation of these high performance devices. Successful demonstrations have been made of modulators that are based upon the plasma dispersion effect 1 , as well as hybrid approaches involving the incorporation of other materials such as III-V compounds 2 , SiGe 3 , graphene 4 , or organic materials 5 . On the component level, a large amount of research is ongoing worldwide to achieve increased levels of performance in different metrics such as speed, power consumption, modulation depth, footprint, wavelength independence, temperature insensitivity, and optical loss.…”

Section: Introductionmentioning

confidence: 99%

All silicon approach to modulation and detection at λ = 2 µm

Littlejohns

Nedeljkovic

Cao

et al. 2018

Optical Interconnects XVIII

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Silicon photonics has traditionally focused on near infrared wavelengths, with tremendous progress seen over the past decade. However, more recently, research has extended into mid infrared wavelengths of 2 µm and beyond. Optical modulators are a key component for silicon photonics interconnects at both the conventional communication wavelengths of 1.3 µm and 1.55 µm, and the emerging mid-infrared wavelengths. The mid-infrared wavelength range is particularly interesting for a number of applications, including sensing, healthcare and communications. The absorption band of conventional germanium photodetectors only extends to approximately 1.55 µm, so alternative methods of photodetection are required for the mid-infrared wavelengths. One possible CMOS compatible solution is a silicon defect detector. Here, we present our recent results in these areas. Modulation at the wavelength of 2 µm has been theoretically investigated, and photodetection above 25 Gb/s has been practically demonstrated.

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Recent breakthroughs in carrier depletion based silicon optical modulators

Cited by 187 publications

References 80 publications

Optical detection and modulation at 2µm-25µm in silicon

Optical detection and modulation at 2µm-25µm in silicon

A Novel Broadband Electro-Absorption Modulator Based on Bandfilling in n-InGaAs: Design and Simulations

All silicon approach to modulation and detection at λ = 2 µm

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