A Novel Broadband Electro-Absorption Modulator Based on Bandfilling in n-InGaAs: Design and Simulations

Abstract

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InP Membrane on Silicon (IMOS) Photonics

“…This leads to a further reduction in device sizes, and thus to higher integration density. Moreover, it opens up the path to optimization of layer stacks for other functions, like a band-filling based EAM [21]. It even will allow a flexible, application oriented, use of the platform; for example including different active materials suitable for other wavelength ranges, that are relevant for sensing.…”

Linear bounded potential model for semiconductor band bending

“…The characteristics of these potentials are very similar to our LBP; (ii) the potential applications of the FKE in microelectronics (i.e. electro-absorption modulators [30,31]) where the LBP is a suitable model to describe these micro and nano-devices.…”

Millimeter-wave generation using hybrid silicon photonics

“…While these devices can be fully integrated into SOI platforms, one can also rely on EAMs in InP or SiGe through heterogeneous integration, as mentioned earlier. Indeed, these EAMs benefit from the strong electro-absorption effect in these materials, either arising from the quantum-confined Stark-effect (QCSE) in MQWs or the FKE [152,267,268]. This change in absorption can function as direct intensity modulation, thus making the realization of very compact modulators possible [269,270] without the need for a long phase modulator in an MZI or ring configuration.…”