InP Membrane on Silicon (IMOS) Photonics

Abstract

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Design and Modelling of a Novel Integrated Photonic Device for Nano-Scale Magnetic Memory Reading

“…The multi-layers are placed on top of the waveguides as the top cladding. The rest of the photonic device is fabricated on InP membranes since the devices are based on the IMOS platform [21]. The waveguides have a cross-section of 300 × 400 nm (height and width) and the multi-layered top claddings have the dimensions of 400 × 50 × 12 nm (width, length and height).…”

“…A mathematical model is built in order to simulate the output light intensity vs. light wavelength for the designed devices. The model is given input parameters that are based on IMOS building block performances [21] and FDTD magneto-optical simulations [24] (see Section 2.1). An overview of the model parameters and their brief descriptions are given in Table 1.…”

“…To assess the feasibility of using MOKE for on-chip all-optical magnetic memory reading functionality, as well as using it as an analytical tool to quantitatively measure magnetization-induced mode conversion, we investigated specially designed photonic devices whose waveguides are cladded with ultra-thin (12 nm), nano-scale (50 × 400 nm) PMA magnetic memory bits, of the composition mentioned before. By using mathematical models of the designed photonic devices, whose building block performance parameters are chosen according to the InP Membrane on Silicon (IMOS) platform [21], the accuracy of the memory-bit read-out, optical loss and tolerance to noise are tested. It has been shown that the device is able to read a nanoscale memory bit (400 × 50 × 12 nm) by using a Kerr rotation as small as 0.2 • , in the presence of a ∼10 dB noise in terms of signal-to-noise ratio (SNR).…”

Anti-reflection subwavelength gratings for InP-based waveguide facets

“…In this Letter, we simulate, design, and experimentally demonstrate an AR subwavelength waveguide facet grating on the InP-membrane-on-silicon (IMOS) platform [15]. The IMOS platform comprises a 300 nm thick InP photonic membrane on a standard silicon wafer.…”

“…The InP substrate and InGaAs etch-stop layers are removed by selective wet-chemical etching. The thin patterned InP membrane remains on the silicon wafer [15]. Due to the large index differences among InP (n = 3.17), BCB (n = 1.54), and SiO 2 (n = 1.45), very compact waveguides can be realized.…”