J. M. Dhimmar scite author profile

The current-voltage (I-V) characteristics of In/p-Si Schottky barrier contact were measured over the temperature range 230-360 K with interval of 10 K. The calculated zero bias barrier height ( bo  ) and the ideality factor (n) using thermionic theory show strong temperature dependence. The experimental values of bo      plot gives bo   1.17 eV and A *  31.16 A/cm 2 K 2 with standard deviation 0  0.16 V.

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The temperature dependent ideality factor effect on I–V characteristics of Schottky diode

Modi

Dhimmar

2012

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Temperature Dependence Junction Parameters: Schottky Barrier, Flatband Barrier, and Temperature Coefficients of Schottky Diode

Dhimmar

Modi

2014

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Synthesis and characterization of direct vapour transport grown Sb2Se3 crystals

Patel

Desai

et al. 2021

Materials Today: Proceedings

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Micro-Structural and Thermoelectric Characterization of Zinc-Doped In0.6Se0.4 Crystal Grown by Direct Vapour Transport Method

et al. 2020

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Synthesis of enhanced (Sn$$_{0.05}$$Sb$$_{0.15}$$)$$_2$$(Te$$_{0.02}$$Se$$_{0.18}$$)$$_3$$ crystals for multi-sensing applications

et al. 2022

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J. M. Dhimmar

Optical and Dispersion Analysis of Zinc Selenide Thin Film

The Effect of Interface States Density Distribution and Series Resistance on Electrical Behaviour of Schottky Diode

Analysis of the Inhomogeneous Barrier in In/p-Si Schottky Contact and Modified Richardson Plot

The temperature dependent ideality factor effect on I–V characteristics of Schottky diode

Temperature Dependence Junction Parameters: Schottky Barrier, Flatband Barrier, and Temperature Coefficients of Schottky Diode

Synthesis and characterization of direct vapour transport grown Sb2Se3 crystals

Micro-Structural and Thermoelectric Characterization of Zinc-Doped In0.6Se0.4 Crystal Grown by Direct Vapour Transport Method

Synthesis of enhanced (Sn$$_{0.05}$$Sb$$_{0.15}$$)$$_2$$(Te$$_{0.02}$$Se$$_{0.18}$$)$$_3$$ crystals for multi-sensing applications

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J. M. Dhimmar

Optical and Dispersion Analysis of Zinc Selenide Thin Film

The Effect of Interface States Density Distribution and Series Resistance on Electrical Behaviour of Schottky Diode

Analysis of the Inhomogeneous Barrier in In/p-Si Schottky Contact and Modified Richardson Plot

The temperature dependent ideality factor effect on I&#x2013;V characteristics of Schottky diode

Temperature Dependence Junction Parameters: Schottky Barrier, Flatband Barrier, and Temperature Coefficients of Schottky Diode

Synthesis and characterization of direct vapour transport grown Sb2Se3 crystals

Micro-Structural and Thermoelectric Characterization of Zinc-Doped In0.6Se0.4 Crystal Grown by Direct Vapour Transport Method

Synthesis of enhanced (Sn$$_{0.05}$$Sb$$_{0.15}$$)$$_2$$(Te$$_{0.02}$$Se$$_{0.18}$$)$$_3$$ crystals for multi-sensing applications

Contact Info

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Resources

About

The temperature dependent ideality factor effect on I–V characteristics of Schottky diode