Micro-Structural and Thermoelectric Characterization of Zinc-Doped In0.6Se0.4 Crystal Grown by Direct Vapour Transport Method

Stress-induced phase-alteration in solution processed indium selenide thin films during annealing

“…34-1431) conrming the presence of polycrystalline hexagonal crystal structure of b-In 3 Se 2 phase with the lattice parameters a ¼ b¼ 4.005 and c ¼ 16.640 A. 12,29,30 However, the phase is changed when a simple mechanical stress is applied on the lms during annealing which is visualized in Fig. 3b.…”