Stress-induced phase-alteration in solution processed indium selenide thin films during annealing

Mondal, Bipanko Kumar; Mostaque, Shaikh Khaled; Islam, Md. Ariful; Hossain, Jaker

doi:10.1039/d1ra01403j

Cited by 13 publications

(12 citation statements)

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“…Stresses can induce phase transitions by reducing the transition energy barrier through lattice deformations. , This driving force for phase transition was shown as a positive effect in a nonmetal halide perovskite BaTiO 3 , where a cubic-to-hexagonal phase transition could be forced at relatively lower annealing temperatures with applied tensile stresses . The tensile stress induced a synergistic shear stress above the critical shear stress, inducing lattice slide and a phase transition at a temperature almost 900 °C lower than it would otherwise occur (575 °C vs 1432 °C) .…”

Section: Opportunities For Further Workmentioning

confidence: 99%

Residual Film Stresses in Perovskite Solar Cells: Origins, Effects, and Mitigation Strategies

Dailey

Printz

2021

ACS Omega

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Metal halide perovskites are an emerging class of materials that are promising for low-cost and high-quality next-generation optoelectronic devices. Despite this potential, perovskites suffer from poor thermomechanical and chemical stability that must be overcome before the technology is commercially viable. Key sources of the instabilities in perovskites are ion migration and defects that can be tied to high residual stresses accumulated in the perovskite thin films during processing. This Mini-Review serves as a general overview of residual thin-film stresses, specifically in perovskite solar cells. A brief introduction to the origin of residual stresses in thin films is followed by the effects of these stresses in perovskite films specifically. Mitigation strategies for these stresses are then highlighted, followed by potential avenues of further exploration of residual stresses in perovskite films.

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Section: Opportunities For Further Workmentioning

confidence: 99%

Residual Film Stresses in Perovskite Solar Cells: Origins, Effects, and Mitigation Strategies

Dailey

Printz

2021

ACS Omega

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“…MgSe a) CdSe [43][44][45] InSe [ 46,47] GaSe [ 48,49] As grown film structure Cubic Hexagonal Amorphous Amorphous (metal/semiconductor interface) diameter. As the junction diameter is small the electron mobility is considerably higher, resulting in lower series resistance and leading to the highest cutoff frequency.…”

Section: Physical Parametermentioning

confidence: 99%

“…The table also suggests that MgSe has the deepest impurity level and the lowest dielectric constant among other films prepared by the same technique. [42][43][44][45][46][47][48][49]…”

Section: Physical Parametermentioning

confidence: 99%

Enhanced Optical and Electrical Interactions at the Pt/MgSe Interfaces Designed for 6G Communication Technology

Algarni

Qasrawi

Khusayfan

2022

Cryst. Res. Technol.

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Magnesium selenide thin films are coated onto glass and semitransparent Pt substrates (nanosheets) by the vacuum evaporation technique under a vacuum pressure of 10 −5 mbar. The effect of Pt nanosheets of thicknesses of 100 nm on the structural, compositional, optical, and electrical properties of MgSe is explored. It is found that platinum nanosheets enhance the light absorbability in the visible and infrared ranges of light. They slightly redshift the energy bandgap and decrease the dielectric constant. The strong interaction between Pt and MgSe increases the electrical conductivity by five orders of magnitude. Pt forms shallow impurity levels in the energy bandgap of MgSe allowing the tunneling process at the Pt/MgSe interfaces. Practically, a Pt/MgSe/Pt tunneling type device is fabricated and tested by the microwave impedance spectroscopy technique. It is found that Pt/MgSe/Pt devices can exhibit resonance-antiresonance and negative capacitance effects which are important in electronic circuits as parasitic capacitance cancelers, signal amplifiers, and noise reducers. In addition, evaluation of the cutoff frequency spectra has shown the ability of using the Pt/MgSe/Pt devices as microwave resonators appropriate for 5G/6G technologies. A cutoff frequency larger than 70 GHz can be achieved by imposing ac signal of amplitude of 0.10 V.

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“…44 Bipanko Kumar Mondal et al achieved a phase change from β-In 3 Se 2 to γ-In 2 Se 3 and also showed an increase in band gap when the annealing temperature was raised to 300 °C along with mechanical stress. 45 Based on the available literature, it is feasible to attain phase change and adjust the band gap of indium selenide at both high and low temperatures. However, there is a lack of research on the use of dynamic pressure to induce phase transformation and tune the band gap in indium selenide.…”

Section: Introductionmentioning

confidence: 99%

Acoustic shock wave-induced phase transition in indium selenide: tuning band gap energy for solar cell applications

Oviya,

Bincy,

Arumugam

et al. 2024

CrystEngComm

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Stress-induced phase-alteration in solution processed indium selenide thin films during annealing

Abstract: This article demonstrates the successful synthesis of indium selenide thin films by a spin coating method in air using thiol-amine cosolvents.

Cited by 13 publications

References 50 publications

Residual Film Stresses in Perovskite Solar Cells: Origins, Effects, and Mitigation Strategies

Residual Film Stresses in Perovskite Solar Cells: Origins, Effects, and Mitigation Strategies

Enhanced Optical and Electrical Interactions at the Pt/MgSe Interfaces Designed for 6G Communication Technology

Acoustic shock wave-induced phase transition in indium selenide: tuning band gap energy for solar cell applications

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