2021
DOI: 10.1016/j.matpr.2020.10.897
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Synthesis and characterization of direct vapour transport grown Sb2Se3 crystals

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“…The temperature is gradually increased from room temperature to a target temperature, which is usually between 1100 and 1300 K. After a long holding time (tens of hours), the cooling to room temperature is carried out gradually. This method is faster than the Bridgman method, but precursors purity and temperature must be carefully controlled to achieve high crystal quality [200][201][202]. Two examples of high-performing TEMs grown with the former and latter methods are summed up in Section 4.3.1 [119,124].…”
Section: Processing Technologies: Single Crystal Growthmentioning
confidence: 99%
“…The temperature is gradually increased from room temperature to a target temperature, which is usually between 1100 and 1300 K. After a long holding time (tens of hours), the cooling to room temperature is carried out gradually. This method is faster than the Bridgman method, but precursors purity and temperature must be carefully controlled to achieve high crystal quality [200][201][202]. Two examples of high-performing TEMs grown with the former and latter methods are summed up in Section 4.3.1 [119,124].…”
Section: Processing Technologies: Single Crystal Growthmentioning
confidence: 99%