Analysis of the Inhomogeneous Barrier in In/p-Si Schottky Contact and Modified Richardson Plot

Dhimmar, J. M.; Desai, H. N.; Modi, B. P.

doi:10.21272/jnep.8(2).02006

Cited by 10 publications

(5 citation statements)

References 46 publications

(53 reference statements)

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“…32 This deviation in A* is generally explained by the barrier inhomogeneity of the contacts, which means that it consists of high and low barrier areas at the interface. 34 The inhomogeneous BH probably arises due to several types of defects present at the GaN NRs/Si hetero-interfaces. 35 In addition, the effective area for current conduction (A eff ) is signicantly lower than the geometric contact area (A geom ) due to the preferential current ow through the lower barrier height regions.…”

Section: Resultsmentioning

confidence: 99%

Temperature-dependent transport properties of CVD-fabricated n-GaN nanorods/p-Si heterojunction devices

et al. 2020

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Section: Resultsmentioning

confidence: 99%

Temperature-dependent transport properties of CVD-fabricated n-GaN nanorods/p-Si heterojunction devices

et al. 2020

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“…According to the TE model, in an ideal Schottky contact Φ b and η should not vary with temperature. The variation of Φ b and η with temperature indicates the presence of nonidealities at the Schottky interface/junction [28][29][30][31][32][33][34]. Schottky barrier formation at the M/S interface includes different non-idealities, such as (a) impurity atoms or dangling bonds of atoms at the semiconductor surface or loosely bonded M/S atoms, (b) a tunneling current in addition to a thermionic current, (c) generation-recombination current in the depletion region and (d) image force lowering of the barrier at the M/S interface [27,35].…”

Section: (A) and Table 2)mentioning

confidence: 99%

“…Next, a Gaussian distribution of Schottky barrier height across the M/S junction was considered [39], which is based on the analytical potential fluctuation model given by Werner and Guttler [35]. The Gaussian distribution p(ϕ b ) of Schottky barriers at the Ni/AlGaN M/S interface [33,35] is given by equation (3) below:…”

Section: (A) and Table 2)mentioning

confidence: 99%

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Improvement in Schottky barrier inhomogeneities of Ni/AlGaN/GaN Schottky diodes after cumulative γ-ray irradiation

Visvkarma¹,

Sharma²,

Saraswat³

et al. 2021

Semicond. Sci. Technol.

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This article reports the effect of gamma (γ)-ray irradiation on barrier inhomogeneities that leads towards improvement in diode parameters in Ni-AlGaN/GaN Schottky diodes. The Schottky diodes were subjected to a cumulative γ-ray dose up to 15 kGy and their current–voltage (I–V) and capacitance–voltage (C–V) characteristics were measured simultaneously at different temperatures during the pristine stage and after each radiation dose. The Schottky barrier height (Φ b) had an increase of 10% to 20% in the temperature range greater than 250 K. Whereas, the change in the ideality factor (η) was found to be prevalent at lower temperatures (<250 K). More linearity in the behavior of η variation with temperature was found post γ-irradiation showing an improvement in homogeneity of the metal/semiconductor interface. Post γ-ray exposure, barrier inhomogeneities at the metal/semiconductor interface were found to reduce due to annealing effects that also led towards an increase in the contribution of thermionic emission current flow. Further, a decrease of 16% in the standard deviation of the Gaussian distribution of Φ b around the mean Φ b was obtained. A decrease in contact resistance (R C) was deduced using a circular transmission line method, which was also due to the partial annealing effect of γ-ray radiation. Finally, the channel carrier concentration (n s), extracted using C–V analysis, was found to remain unaltered.

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“…A and A* are expressed as the diode' active area and Richardson constant (32 A cm -2 K -2 to p-Si) (Dhimmar, Desai, and Modi 2016), respectively. Ф value of IGZO/Si hetero-junction for the darkness and the illumination condition were obtained to be 0,71 eV and 0.65 eV, respectively.…”

Section: Ag/igzo/p-si/al Hetero-junction Diodes Electrical Characteristics Of In the Dark And The Illumination Environmentmentioning

confidence: 99%

Electrical Properties of The Heterojunction Diode Produced Based on IGZO Thin Film

Yiğit¹,

Gündoğdu²,

Kılıç³

2021

Afyon Kocatepe University Journal of Sciences and Engineering

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In this study, IGZO thin films were produced on SLG and p-Si wafer at low temperature, under oxygen gas pressure of 5×10 -2 and 7×10 -2 mbar, using PLD technique and these thin films were annealed at 300 o C temperature. IGZO thin films were grown in amorphous structure. As the oxygen gas pressure was increased, the particle size in the thin films were increased. IGZO/p-Si heterojunction diode was produced based on IGZO thin film that was deposited under oxygen pressure in 7×10 -2 mbar and not annealed, and − curves of this diode in darkness and under the illumination condition were obtained and then its barrier height and idelaity factor were calculated. In an illumination condition, , and Ф values of IGZO/Si heterojunction diode were calculated by the traditional − , Norde and Cheung Cheung methods. Results obtained in this work have been interpreted as well as concluded to be close to each other.

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Analysis of the Inhomogeneous Barrier in In/p-Si Schottky Contact and Modified Richardson Plot

Cited by 10 publications

References 46 publications

Temperature-dependent transport properties of CVD-fabricated n-GaN nanorods/p-Si heterojunction devices

Temperature-dependent transport properties of CVD-fabricated n-GaN nanorods/p-Si heterojunction devices

Improvement in Schottky barrier inhomogeneities of Ni/AlGaN/GaN Schottky diodes after cumulative γ-ray irradiation

Electrical Properties of The Heterojunction Diode Produced Based on IGZO Thin Film

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