Temperature Dependence Junction Parameters: Schottky Barrier, Flatband Barrier, and Temperature Coefficients of Schottky Diode

Dhimmar, J. M.; Modi, B. P.

doi:10.1007/978-3-319-03002-9_21

Cited by 1 publication

(2 citation statements)

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“…The work function of a metal is known to decrease with increasing temperature. [ 23 ] At the same time, if temperature grows, quasi‐Fermi level for holes in the film will shift toward the bang gap center, leading to the work function decreasing. Since the temperature scales are similar in both cases, [ 23 ] temperature‐induced variation of the work function in a metal will largely be compensated by the respective changes in a p ‐type ferroelectric, and the dependence of the CPD on temperature may be ignored.…”

Section: Simulation Of Non‐stationary Processes In Ferroelectric Memr...mentioning

confidence: 99%

“…[ 23 ] At the same time, if temperature grows, quasi‐Fermi level for holes in the film will shift toward the bang gap center, leading to the work function decreasing. Since the temperature scales are similar in both cases, [ 23 ] temperature‐induced variation of the work function in a metal will largely be compensated by the respective changes in a p ‐type ferroelectric, and the dependence of the CPD on temperature may be ignored. The temperature coefficient of the CPD for a particular ferroelectric structure can be determined indirectly from the I ‐ V characteristics taken at different temperatures.…”

Section: Simulation Of Non‐stationary Processes In Ferroelectric Memr...mentioning

confidence: 99%

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Dynamics of Analog Switching Behavior in Thin Polycrystalline Barium Titanate

Andreeva,

Ryndin,

Petukhov

et al. 2024

Adv Elect Materials

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Engineering of interfaces and point defects in ferroelectric memristors is an efficient way for manipulating the resistive switching effects of mixed ionic‐electronic nature. However, an interplay between the defects, interfacial properties, and ferroelectric polarization as well as their influence on the resistance state tuning are yet to be revealed. By considering the memristive device built on a thin polycrystalline BaTiO3 film, a drift‐diffusion model of non‐stationary processes is developed. The model is based on Poisson and continuity equations solved numerically and accounts for various transport mechanisms for electrons, holes, and oxygen vacancies. Comparing simulated resistive effects with experimental data taken in a wide temperature range, it is shown that an appearance of the analog resistive switching cannot be explained solely by oxygen‐ionic transport. Investigated switching dynamics claims the oxygen vacancies redistribution to be responsible for the analog character of the switching at the prevalence of the electron hopping transport. Crucially, the required dynamics of the vacancies redistribution is achieved only in a narrow range of their mobility. These results can be used in designing the ferroelectric memristors for nonvolatile multilevel memory devices satisfying the requirements that arise at the stages of their integration into neuromorphic architectures.

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Section: Simulation Of Non‐stationary Processes In Ferroelectric Memr...mentioning

confidence: 99%

Section: Simulation Of Non‐stationary Processes In Ferroelectric Memr...mentioning

confidence: 99%