The temperature dependent ideality factor effect on I&amp;#x2013;V characteristics of Schottky diode

Modi, B. P.; Dhimmar, J. M.

doi:10.1109/et2ecn.2012.6470063

Cited by 11 publications

(4 citation statements)

References 41 publications

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“…The values of the calculated Schottky barrier height ranges from ∼0.2 eV at 81.5 K to ∼0.55 eV at 460 K. In addition, a linear correlation between f B and η is observed for high values of η (low temperatures) as described in supplementary information S4. Similar trends of ideality factor and Schottky barrier height as a function of temperature were previously reported in a wide range of Schottky diode devices [34][35][36][37][38]. The deviation from pure TE model is particularly evident at low temperatures where the η value widely departs from 1.…”

Section: Schottky Barrier Propertiessupporting

confidence: 82%

Junction properties of single ZnO nanowires with asymmetrical Pt and Cu contacts

2019

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Metal-semiconductor interfaces play a crucial role not only for regulating the electronic conduction mechanism but also in determining new functionalities in nanosized devices. In this work, we reported the investigation of the junction properties of single ZnO nanowires (NWs) asymmetrically contacted by means of a Pt electrochemically inert and a Cu electrochemically active electrode. At low applied voltages, these devices operate as diodes where the conduction mechanism was found to be dominated by the Schottky barrier at the Cu/ZnO interface. Junction parameters such as the Schottky barrier height, the ideality factor and the series resistance have been analyzed according to the thermionic emission theory. Different methods for parameter retrieval from I-V-T measurements are discussed and compared. A potential fluctuation model is considered in order to account for barrier inhomogeneities, revealing the presence of two Gaussian distribution of barrier heights. On the other hand, new device features arise from electrochemical dissolution and migration of Cu ions along the NW when high electric fields are implied. These electrochemical processes are underlaying the resistive switching and memristive behavior observed in single ZnO NWs, as suggested also by direct observation of Cu nanoclusters along the nanostructures after the switching events.

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Section: Schottky Barrier Propertiessupporting

confidence: 82%

Junction properties of single ZnO nanowires with asymmetrical Pt and Cu contacts

2019

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“…The increase of SBH and decrease of n with the increasing measurement temperature (Fig. (b)) are observed, suggesting the presence of other conduction mechanism rather than the thermionic emission and/or the inhomogeneous nature of the metal–semiconductor (m–s) interface . The error bars in Fig.…”

Section: Resultsmentioning

confidence: 81%

AlGaN/GaN high electron mobility transistors on Si with sputtered TiN gate

Arulkumaran

et al. 2016

Physica Status Solidi (a)

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AlGaN/GaN high electron mobility transistors (HEMTs) on Si were fabricated and studied using sputtered TiN Schottky gate. The sputtered TiN on AlGaN/GaN HEMTs exhibit an improved Schottky barrier height (SBH) of ∼1.1 eV, which is larger than the Schottky contacts formed by the other reported TiN‐based stacks and by most of Ni/Au‐free materials. The improvement of SBH is due to the increase of metal work function either by the incorporation of oxygen in sputtered TiN or by using a high N2/Ar ratio during the sputtering process. Although the HEMTs with TiN gate show comparable DC output and transfer characteristics compared to devices with Ni/Au gate, they exhibit enhanced OFF‐state breakdown voltages (BVgd) of ∼48–58 V. This is consistent with the observation of an order of magnitude lower reverse gate leakage current and is also well agreed by the enhanced SBH of the sputtered TiN as compared to the Ni/Au gate. With reference to the HEMTs with Ni/Au gate, a slight increase of dynamic/static on‐resistances (Rds[ON]) ratio (∼8%) was observed in the sputtered TiN gate HEMTs.

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“…5 shows the extracted results and model simulation of I s and N F from 300 to 40 K. The N F was approaching 2, indicating that the recombination in space charge region contributes to the total collector current besides drift-diffusion current. As the inset shown, however, N F was much greater than 2 when the temperature went down to 4.8 K. This suggests that the current is not only composed of drift-diffusion and recombination current in space charge region, but also composed of tunneling current [44][45][46][47][48]. The extracted I s , from 300 to 4.8 K, is also shown in the inset.…”

Section: Gummel Characteristicsmentioning

confidence: 88%

Operation of silicon-germanium heterojunction bipolar transistors with different structures at deep cryogenic temperature

Liang

Wang

et al. 2019

Science Bulletin

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The temperature dependent ideality factor effect on I–V characteristics of Schottky diode

Cited by 11 publications

References 41 publications

Junction properties of single ZnO nanowires with asymmetrical Pt and Cu contacts

Junction properties of single ZnO nanowires with asymmetrical Pt and Cu contacts

AlGaN/GaN high electron mobility transistors on Si with sputtered TiN gate

Operation of silicon-germanium heterojunction bipolar transistors with different structures at deep cryogenic temperature

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