Recently, wearable pressure sensors have attracted tremendous attention because of their potential applications in monitoring physiological signals for human healthcare. Sensitivity and linearity are the two most essential parameters for pressure sensors. Although various designed micro/nanostructure morphologies have been introduced, the trade-off between sensitivity and linearity has not been well balanced. Human skin, which contains force receptors in a reticular layer, has a high sensitivity even for large external stimuli. Herein, inspired by the skin epidermis with high-performance force sensing, we have proposed a special surface morphology with spinosum microstructure of random distribution via the combination of an abrasive paper template and reduced graphene oxide. The sensitivity of the graphene pressure sensor with random distribution spinosum (RDS) microstructure is as high as 25.1 kPa in a wide linearity range of 0-2.6 kPa. Our pressure sensor exhibits superior comprehensive properties compared with previous surface-modified pressure sensors. According to simulation and mechanism analyses, the spinosum microstructure and random distribution contribute to the high sensitivity and large linearity range, respectively. In addition, the pressure sensor shows promising potential in detecting human physiological signals, such as heartbeat, respiration, phonation, and human motions of a pushup, arm bending, and walking. The wearable pressure sensor array was further used to detect gait states of supination, neutral, and pronation. The RDS microstructure provides an alternative strategy to improve the performance of pressure sensors and extend their potential applications in monitoring human activities.

Due to its excellent flexibility, graphene has an important application prospect in epidermal electronic sensors. However, there are drawbacks in current devices, such as sensitivity, range, lamination, and artistry. In this work, we have demonstrated a multilayer graphene epidermal electronic skin based on laser scribing graphene, whose patterns are programmable. A process has been developed to remove the unreduced graphene oxide. This method makes the epidermal electronic skin not only transferable to butterflies, human bodies, and any other objects inseparably and elegantly, merely with the assistance of water, but also have better sensitivity and stability. Therefore, pattern electronic skin could attach to every object like artwork. When packed in Ecoflex, electronic skin exhibits excellent performance, including ultrahigh sensitivity (gauge factor up to 673), large strain range (as high as 10%), and long-term stability. Therefore, many subtle physiological signals can be detected based on epidermal electronic skin with a single graphene line. Electronic skin with multiple graphene lines is employed to detect large-range human motion. To provide a deeper understanding of the resistance variation mechanism, a physical model is established to explain the relationship between the crack directions and electrical characteristics. These results show that graphene epidermal electronic skin has huge potential in health care and intelligent systems.

A controllable ferroelastic switching in ferroelectric/multiferroic oxides is highly desirable due to the non-volatile strain and possible coupling between lattice and other order parameter in heterostructures. However, a substrate clamping usually inhibits their elastic deformation in thin films without micro/nano-patterned structure so that the integration of the non-volatile strain with thin film devices is challenging. Here, we report that reversible in-plane elastic switching with a non-volatile strain of approximately 0.4% can be achieved in layered-perovskite Bi2WO6 thin films, where the ferroelectric polarization rotates by 90° within four in-plane preferred orientations. Phase-field simulation indicates that the energy barrier of ferroelastic switching in orthorhombic Bi2WO6 film is ten times lower than the one in PbTiO3 films, revealing the origin of the switching with negligible substrate constraint. The reversible control of the in-plane strain in this layered-perovskite thin film demonstrates a new pathway to integrate mechanical deformation with nanoscale electronic and/or magnetoelectronic applications.

A simple and robust refractive index (RI) sensor based on a Mach-Zehnder interferometer has been demonstrated. A section of optical microfiber drawn from silica fiber is employed as the sensing arm. Because of the evanescent field, a slight change of the ambient RI will lead to the variation of the microfiber propagation constant, which will further change the optical length. In order to compensate the variation of the optical length difference, a tunable optical delay line (ODL) is inserted into the other arm. By measuring the delay of the ODL, the ambient RI can be simply demodulated. A high RI sensitivity of about 7159  μm/refractive index unit is achieved at microfiber diameter of 2.0 μm.

The Boltzmann distribution of electrons induced fundamental barrier prevents subthreshold swing (SS) from less than 60 mV dec at room temperature, leading to high energy consumption of MOSFETs. Herein, it is demonstrated that an aggressive introduction of the negative capacitance (NC) effect of ferroelectrics can decisively break the fundamental limit governed by the "Boltzmann tyranny". Such MoS negative-capacitance field-effect transistors (NC-FETs) with self-aligned top-gated geometry demonstrated here pull down the SS value to 42.5 mV dec , and simultaneously achieve superior performance of a transconductance of 45.5 μS μm and an on/off ratio of 4 × 10 with channel length less than 100 nm. Furthermore, the inserted HfO layer not only realizes a stable NC gate stack structure, but also prevents the ferroelectric P(VDF-TrFE) from fatigue with robust stability. Notably, the fabricated MoS NC-FETs are distinctly different from traditional MOSFETs. The on-state current increases as the temperature decreases even down to 20 K, and the SS values exhibit nonlinear dependence with temperature due to the implementation of the ferroelectric gate stack. The NC-FETs enable fundamental applications through overcoming the Boltzmann limit in nanoelectronics and open up an avenue to low-power transistors needed for many exciting long-endurance portable consumer products.

Single-crystal (SC) perovskite is currently a promising material due to its high quantum efficiency and long diffusion length. However, the reported perovskite photodetection range (<800 nm) and response time (>10 μs) are still limited. Here, to promote the development of perovskite-integrated optoelectronic devices, this work demonstrates wider photodetection range and shorter response time perovskite photodetector by integrating the SC CH3NH3PbBr3 (MAPbBr3) perovskite on silicon (Si). The Si/MAPbBr3 heterojunction photodetector with an improved interface exhibits high-speed, broad-spectrum, and long-term stability performances. To the best of our knowledge, the measured detectable spectrum (405–1064 nm) largely expands the widest response range reported in previous perovskite-based photodetectors. In addition, the rise time is as fast as 520 ns, which is comparable to that of commercial germanium photodetectors. Moreover, the Si/MAPbBr3 device can maintain excellent photocurrent performance for up to 3 months. Furthermore, typical gray scale face imaging is realized by scanning the Si/MAPbBr3 single-pixel photodetector. This work using an ultrafast photodetector by directly integrating perovskite on Si can promote advances in next-generation integrated optoelectronic technology.

n-ZnO nanofilm/p-Si micropillar heterostructure light-emitting diode (LED) arrays for white light emissions are achieved and the light emission intensity of LED array is enhanced by 120% under -0.05% compressive strains. These results indicate a promising approach to fabricate Si-based light-emitting components with high performances enhanced by the piezo-phototronic effect, with potential applications in touchpad technology, personalized signatures, smart skin, and silicon-based photonic integrated circuits.

Based on white light emission at silicon (Si)/ZnO hetrerojunction, a pressure-sensitive Si/ZnO nanowires heterostructure matrix light emitting diode (LED) array is developed. The light emission intensity of a single heterostructure LED is tuned by external strain: when the applied stress keeps increasing, the emission intensity first increases and then decreases with a maximum value at a compressive strain of 0.15-0.2%. This result is attributed to the piezo-phototronic effect, which can efficiently modulate the LED emission intensity by utilizing the strain-induced piezo-polarization charges. It could tune the energy band diagrams at the junction area and regulate the optoelectronic processes such as charge carriers generation, separation, recombination, and transport. This study achieves tuning silicon based devices through piezo-phototronic effect.