Enhancing Light Emission of ZnO‐Nanofilm/Si‐Micropillar Heterostructure Arrays by Piezo‐Phototronic Effect

Abstract

n-ZnO nanofilm/p-Si micropillar heterostructure light-emitting diode (LED) arrays for white light emissions are achieved and the light emission intensity of LED array is enhanced by 120% under -0.05% compressive strains. These results indicate a promising approach to fabricate Si-based light-emitting components with high performances enhanced by the piezo-phototronic effect, with potential applications in touchpad technology, personalized signatures, smart skin, and silicon-based photonic integrated circuits.

High-Resolution Light-Emitting Diode Array Based on an Ordered ZnO Nanowire/SiGe Heterojunction

“…Nevertheless, the measured results still clearly demonstrate that the light emission of the developed ZnO nanowire/SiGe heterojunction LED devices can be effectively modulated by the piezo-phototronic effect. This phenomenon has also been observed in LED devices based on ZnO-nanofilm/Si-micropillar heterostructure arrays [25]. In addition, the pressure distribution applied by the sapphire mold can be calculated from the light intensity distribution.…”

“…In addition, more electrons will be drifted and trapped at heterointerface of ZnO nanowire/SiGe alloy due to the field effect of E piezo , i.e., the CB is effectively pulled down at the vicinity of heterointerface because of the induced positive piezoelectric charges. These effects increase the injection current and the light intensity of LED devices [25].…”

Enhanced photoresponsivity of the MoS2-GaN heterojunction diode via the piezo-phototronic effect

“…In recent years, the newly emerging piezotronic and piezo-phototronic devices can use externally applied strain to tune electrical transport and directly convert strain to a change in semiconductor conductance via the piezo-electric polarization charges. 25,26,[37][38][39][40] Next, we also demonstrated the piezophototronic-enhanced photocurrent for the as-fabricated MoS 2 and GaN heterojunction diode. Before illuminating the device, the output characteristics are depicted as a function of externally applied pressure (strain) in Figure 4a.…”

“…22 Remarkable performance improvements in solar cells, 23,24 LEDs, 25,26 and photodetectors 27,28 have been confirmed via the piezo-phototronic effect. As a traditional piezoelectric material, wurtzite GaN is intrinsically sensitive to an externally applied strain.…”

A nanowire based triboelectric nanogenerator for harvesting water wave energy and its applications

“…4(b), to 3.6 V for about 500 s. The energy stored in the 1 mF capacity can be used for many applications, like powering the time measuring device, humidity sensor and light-emitting diode array sensors. [32][33][34] The time measuring device powered by the nanowire based TENG and the 1 mF capacitor can time for more than 10 min. Fig.…”