The Effect of Interface States Density Distribution and Series Resistance on Electrical Behaviour of Schottky Diode

Dhimmar, J. M.; Desai, H. N.; Modi, B. P.

doi:10.1016/j.matpr.2016.04.056

Cited by 12 publications

(8 citation statements)

References 26 publications

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“…The position and velocity vectors are updated after the calculation of separation, alignment and cohesion coefficients using Eqs. (9)(10)(11). Next, both attraction to the food sources and 𝐹 𝑖 and distraction from enemies 𝐸 𝑖 are computed using Eqs.…”

Section: Dragonfly Algorithmmentioning

confidence: 99%

“…Ideality factor (𝑛), barrier height (Ф 𝑏 ), series resistance (𝑅 𝑠 ) and saturation current ( 𝐼 𝑠 ) are the main electronic parameters of Schottky barrier diodes (SBD) [7,8]. Moreover, the SBD performance and reliability are significantly influenced by the presence of interface states (N ss ) between deposited metal and semiconductor surface [9,10].…”

Section: Introductionmentioning

confidence: 99%

See 1 more Smart Citation

Optimal identification of Be-doped Al0.29Ga0.71As Schottky diode parameters using Dragonfly Algorithm: A thermal effect study

Filali

Amrani

Garoudja

et al. 2021

Superlattices and Microstructures

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Section: Dragonfly Algorithmmentioning

confidence: 99%

Section: Introductionmentioning

confidence: 99%

Optimal identification of Be-doped Al0.29Ga0.71As Schottky diode parameters using Dragonfly Algorithm: A thermal effect study

Filali

Amrani

Garoudja

et al. 2021

Superlattices and Microstructures

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“…The crucial effect of adding an oxide layer on the semiconductor surface is to passivate the dangling bonds. This passivation can reduce the anomalies in the diode current-voltage characteristic behavior by minimizing the surface states [52]. Another important aspect of the oxide interfacial layer between the MS Schottky diode is to achieve a low leakage current.…”

Section: Comparison Between Ms and Mos Devicesmentioning

confidence: 99%

Metal oxide semiconductor-based Schottky diodes: a review of recent advances

Al-Ahmadi

2020

Mater. Res. Express

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Metal-oxide-semiconductor (MOS) structures are essential for a wide range of semiconductor devices. This study reviews the development of MOS Schottky diode, which offers enhanced performance when compared with conventional metal-semiconductor Schottky diode structures because of the presence of the oxide layer. This layer increases Schottky barrier heights and reduced leakage currents. It also compared the MOS and metal-semiconductor structures. Recent advances in the development of MOS Schottky diodes are then discussed, with a focus on aspects such as insulating materials development, doping effects, and manufacturing technologies, along with potential device applications ranging from hydrogen gas sensors to photodetectors. Device structures, including oxide semiconductor thin film-based devices, p-type and n-type oxide semiconductor materials, and the optical and electrical properties of these materials are then discussed with a view toward optoelectronic applications. Finally, potential future development directions are outlined, including the use of thinfilm nanostructures and high-k dielectric materials, and the application of graphene as a Schottky barrier material.Low contact resistance is required for good ohmic contact and high-speed semiconductor devices. In contrast, an ideal Schottky junction acts like an ideal diode, where high current only flows in the forward-biased direction and offers infinite resistance in the opposite direction [11]. The type of junction can be changed by varying different metals and the doping level of the semiconductor [12]. The core focus of this study is on the Schottky diode for its use in the switching devices, which reduces the current leakage and power consumption [13].This review is categorized into fives sections. Following the introductory section, the comparison of MS and MOS devices is provided in the second section, while important equations related to MOS Schottky Diode are described for carrier transport mechanism in the third section. The fourth section highlights the recent progress of MOS devices and their applications in the fourth section. Lastly, section five briefly sums up the reviewed findings and indicates the future direction of the work. ReviewGenerally, the metal oxide/insulator semiconductor (MOS/MIS) structure is obtained by inserting an insulator layer between a metal and a semiconductor [14]. In the MOS structure, an oxide layer separates the metal and semiconductor from each other. For instance, at the metal/insulator interfaces, there is a continuous distribution of surface states with energies located in the bandgap of the semiconductor [15]. The intermediate oxide layer helps prevent the diffusion of the metal into the semiconductor but also alleviates the electric field reduction in MIS Schottky diodes. The interfacial layer helps determine the device characteristics, performance, and stability [16]. Karabulut et al [17] explains that the MOS or MIS capacitor is the most effective device for semiconductor surfaces based on their practical...

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“…Anderson [67], who made a detailed study on the current transport mechanism and drawing energy band diagrams of the hetero-junctions, used the standard TE current theory to obtain some diode parameters such as ideality factor n and BH Φ IV in the HJs. Furthermore, it is known that TE current method is a suitable method to calculate Φ IV and ideality factor n from fit to the linear portion of the forward bias I -V curve [56][57][58][59][67][68][69][70][71][72][73][74][75][76][77][78][79][80][81][82]. Moreover, the TE current method can be employed to understand the nature and effect of the barrier modification of the heterojunction under the MT and bias voltage [72].…”

Section: High Voltage Regionmentioning

confidence: 99%

“…The forward bias I -V curves of the YbFeO 3−δ /Si junction will be a logical choice to calculate some diode parameters including ideality factor n, BH and series resistance at the intermediate and high bias regimes. Therefore, the n experimentally has a value greater than one due to the contribution of the YbFeO 3−δ and p-Si layers and their series resistance to the current transport, and the presence of a wide distribution of low potential BH inhomogeneity or patches [73][74][75][76][77][78][79][80]. For the forward bias situation, the Φ(0, T) values for the holes from the p-Si side to YbFeO 3−δ side of the Al/YbFeO 3−δ /p-Si/Al heterojunction are obtained from the intercept of the linear part of the curves in figure 7, using equation (7).…”

Section: High Voltage Regionmentioning

confidence: 99%

The temperature induced current transport characteristics in the orthoferrite YbFeO_{3−

δ} thin film/p-type Si structure

Polat

Coșkun

Efeoǧlu

et al. 2020

J. Phys.: Condens. Matter

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The perovskite ytterbium ferrite is a new ferroelectric semiconductor material. We presented the temperature induced current–voltage (I–V) characteristics of the Al/YbFeO3−δ /p-Si/Al hetero-junction. The orthoferrite YbFeO3−δ thin films were deposited on a single crystal p-type Si substrate by a radio frequency magnetron sputtering system. The potential barrier height (BH) and ideality factor n of the heterojunction were obtained by thermionic emission current method based on the recommendations in the literature. The fact that the calculated slopes of I–V curves become temperature independent implying that the field emission current mechanism takes place across the device, which has been explained by the presence of the spatial inhomogeneity of BHs or potential fluctuations. Moreover, a tunneling transmission coefficient value of 26.67 was obtained for the ferroelectric YbFeO3−δ layer at the Al/p-Si interface.

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The Effect of Interface States Density Distribution and Series Resistance on Electrical Behaviour of Schottky Diode

Cited by 12 publications

References 26 publications

Optimal identification of Be-doped Al0.29Ga0.71As Schottky diode parameters using Dragonfly Algorithm: A thermal effect study

Optimal identification of Be-doped Al0.29Ga0.71As Schottky diode parameters using Dragonfly Algorithm: A thermal effect study

Metal oxide semiconductor-based Schottky diodes: a review of recent advances

The temperature induced current transport characteristics in the orthoferrite YbFeO_{3−

δ} thin film/p-type Si structure

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The Effect of Interface States Density Distribution and Series Resistance on Electrical Behaviour of Schottky Diode

Cited by 12 publications

References 26 publications

Optimal identification of Be-doped Al0.29Ga0.71As Schottky diode parameters using Dragonfly Algorithm: A thermal effect study

Optimal identification of Be-doped Al0.29Ga0.71As Schottky diode parameters using Dragonfly Algorithm: A thermal effect study

Metal oxide semiconductor-based Schottky diodes: a review of recent advances

The temperature induced current transport characteristics in the orthoferrite YbFeO3− δ thin film/p-type Si structure

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Resources

About

The temperature induced current transport characteristics in the orthoferrite YbFeO_{3−

δ} thin film/p-type Si structure