Optimal identification of Be-doped Al0.29Ga0.71As Schottky diode parameters using Dragonfly Algorithm: A thermal effect study

Schottky contact diameter effect on the electrical properties and interface states of Ti/Au/p-AlGaAs/GaAs/Au/Ni/Au Be-doped p-type MBE Schottky diodes

“…The Schottky contacts, of different diameters ranging from 250 to 600 µm, were formed by evaporation of Titanium (Ti) and Gold (Au) layers with thicknesses of ~20 and 200 nm, respectively, on top of the AlGaAs layer. The AlGaAs layer was etched to ~600 nm at the edge of the AlGaAs layer in order to deposit the Ohmic contact (Au/Ni/Au) that was annealed at 360 0 C [25,26] ), extracted from these characteristics, are shown in Figure 2 (c). Parameter extraction is carried out assuming that I-V characteristics obey the simple Schottky equation for thermionic emission given by [27,28]:…”

“…The Schottky contacts, of different diameters ranging from 250 to 600 µm, were formed by evaporation of Titanium (Ti) and Gold (Au) layers with thicknesses of ∼20 and 200 nm, respectively, on top of the AlGaAs layer. The AlGaAs layer was etched to ∼600 nm at the edge of the AlGaAs layer in order to deposit the Ohmic contact (Au/Ni/Au) that was annealed at 360 • C [25,26] The diode structure shows that the Schottky and Ohmic contacts are on horizontally placed on the AlGaAs layer. The AlGaAs layer is doped while the GaAs layer beneath it is undoped.…”