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Be diffusion during post-growth annealing has been studied in InGaAs epitaxial layers, grown between two undoped InGaAs layers. To explain the observed concentration profiles and related diffusion mechanisms, a general substitutional–interstitial model is proposed. On the one hand, a simultaneous diffusion by dissociative and kick-out models is suggested and, on the other hand, the Fermi-level effect is used to explain the functional dependence change of the effective diffusion coefficient of beryllium species with its concentration. The concentration dependent diffusivity has also been covered to perform an improved data fitting of Be diffusion profiles.

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The substrate temperature (Ts) dependence (350–700 °C) of GaAs and Ga1−y InyAs growth rates was investigated in metalorganic molecular beam epitaxy (MOMBE), using triethylgallium (TEG), trimethylindium (TMI), and solid arsenic (As4) sources. For GaAs growth, four distinct Ts dependent regions are observed, including a weak desorption process (500–650 °C) characteristic of MOMBE, preceding atomic Ga desorption (Ts >650 °C). When adding a TMI flux to grow Ga1−yInyAs, this desorption process was much enhanced up to 550 °C, and then decreased above 550 °C when the In desorption phenomenon takes place. Correlatively, the In alloy composition peaks at 550 °C. The same dependence was observed in Ga1−yInyAs growth using solid In and TEG sources. However, in Ga1−xAlxAs growth using solid Al or triethylaluminum (TEA) and TEG sources, the weak desorption observed in GaAs MOMBE was strongly minimized. From these results, possible growth mechanisms are discussed.

We report a resonant Raman scattering study of quaternary In1−xGaxAsyP1−y alloys which confirms the four-mode behavior of the alloy. The scattering amplitude shows resonance enhancement at the E1 edge of the alloy which diminishes with increasing value of x, corresponding to increasing compositional disorder. This disorder further manifests itself in broadening and line-shape asymmetry of the stronger LO-phonon lines.

A series of growths from the liquid phase have shown clearly that a large miscibility gap exists in the InxGa1−xAsyP1−y system at relatively high temperatures. The germinations were performed on (100) GaP. Using (100) InP as a substrate, it is shown that the lattice-matched solids are stabilized. This result is believed to be associated with the strain energy induced by the substrate.

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