Be diffusion mechanisms in InGaAs during post-growth annealing

Koumetz, S.; Marcon, J.; Ketata, K.; Kétata, M.; Dubon‐Chevallier, C.; Launay, P.; Benchimol, J.L.

doi:10.1063/1.114753

Cited by 24 publications

(25 citation statements)

References 5 publications

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“…For example, in Ref. [ 3 ], the authors "suggest the case of neutral beryllium interstitials" (emphasis is ours). This is in spite of a well-known propensity of interstitial alkali earth atoms to donate both their valence electrons to Page 5 of 27 the conduction band of the semiconductor host [ 10,11,13,35 ]; the donation of two electrons to the conduction band was also explicitly computed for interstitial Be in InGaAs in Ref.…”

Section: Page 4 Of 27mentioning

confidence: 99%

Dopant–dopant interactions in beryllium doped indium gallium arsenide: An ab initio study

et al. 2018

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We present an ab initio study of dopant-dopant interactions in beryllium-doped InGaAs. We consider defect formation energies of various interstitial and substitutional defects and their combinations. We find that all substitutional-substitutional interactions can be neglected. On the other hand, interactions involving an interstitial defect are significant. Specially, interstitial Be is stabilized by about 0.9/1.0 eV in the presence of one/two BeGa substitutionals. Ga interstitial is also substantially stabilized by Be interstitials. Two Be interstitials can form a metastable Be-Be-Ga complex with a dissociation energy of 0.26 eV/Be. Therefore, interstitial defects and defectdefect interactions should be considered in accurate models of Be doped InGaAs. We suggest that In and Ga should be treated as separate atoms and not lumped into a single effective group III element, as has been done before. We identified dopant-centred states which indicate the presence of other charge states at finite temperatures, specifically, the presence of Beint +1 (as opposed to Beint +2 at 0K).

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Section: Page 4 Of 27mentioning

confidence: 99%

Dopant–dopant interactions in beryllium doped indium gallium arsenide: An ab initio study

et al. 2018

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“…3,4 A controlled selective area doping of InGaAs layers is required to fully exploit this material potential, and ion beam implantation has emerged as a versatile doping technique to realize the complex doping profiles required for device fabrication. Monolithic planar integration of a high-performance photodiode-junction-field-effect transistor combination has been achieved by using local Si-and Be-ion beam implantations to fabricate a junction field effect transistor on an optimized InGaAs/InP photodiode layer.…”

Section: Introductionmentioning

confidence: 99%

Study of the electrical activation of Si+-implanted InGaAs by means of Raman scattering

Hernández

Cuscó

Blánco

et al. 2003

Journal of Applied Physics

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Raman scattering has been used to study the lattice recovery and electrical activation of Si ϩ -implanted In 0.53 Ga 0.47 As achieved by rapid thermal annealing. The degree of crystallinity recovery of totally amorphized samples is studied for annealing temperatures between 300 and 875°C. A good degree of recovery is achieved for an annealing temperature of 600°C. Higher annealing temperatures are required to electrically activate the Si donors. The observed LO phonon-plasmon coupled modes allow us to monitor the electrical activation by means of Raman scattering. We find that electrical activation sets in for annealing temperatures around 700°C, and gradually increases up to an annealing temperature of 875°C. The optimal conditions for the rapid thermal annealing are found to be 875°C for 10 s.

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“…Be (and Zinc) diffusion were found based on Substitutional-Interstitial Diffusion mechanism (SID), and more precisely, on dissociative [1][2][3][4] or kick-out [5,6] models. Some authors even found that the second model has an advantage over the first [6,71. In contrast, investigations on p-type dopant diffusion in InP based epitaxial compounds, in particular Be in InGaAs, are still limited [8,9,10].…”

Section: Introductionmentioning

confidence: 88%

A Generalized Model of Beryllium Diffusion in InGaASs Epitaxial Structures Under Point Defect Nonequilibrium Conditions

et al. 1997

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Beryllium diffusion during post-growth annealing is investigated in InGaAs epitaxial layers. Indeed, this undesirable diffusion may occur during thermal treatments of InGaAs/lnP Heterojunction Bipolar Transistors (HBT's), which can generate a limitation of frequency performances of these devices. Epitaxial structures have then been grown, one set by Chemical Beam Epitaxy (CBE), and another one by Gas Source Molecular Beam Epitaxy (GSMBE). The post-growth Rapid Thermal Annealing (RTA) was then performed, and Secondary Ion Mass Spectrometry (SIMS) has been used to characterize the Be depht profiles.In parallel with our experimental study, we propose two models of Be diffusion in InGaAs in the case of point defect nonequilibrium. First, a Kick-out Diffusion model considering neutral Be interstitial species and charged point defects has been studied. Then, a Generalized Substitutional-Interstitial Diffusion model based on simultaneous diffusion by Dissociative and Kick-out mechanisms is proposed. Good agreements between experimental depth profiles and simulated curves have been obtained.

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Be diffusion mechanisms in InGaAs during post-growth annealing

Cited by 24 publications

References 5 publications

Dopant–dopant interactions in beryllium doped indium gallium arsenide: An ab initio study

Dopant–dopant interactions in beryllium doped indium gallium arsenide: An ab initio study

Study of the electrical activation of Si+-implanted InGaAs by means of Raman scattering

A Generalized Model of Beryllium Diffusion in InGaASs Epitaxial Structures Under Point Defect Nonequilibrium Conditions

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