Chemical beam epitaxy of indium phosphide

Benchimol, J.L.; Alaoui, F.; Gao, Yijie; Roux, G. Le; Rao, E. V. K.; Alexandre, François

doi:10.1016/0022-0248(90)90351-k

Cited by 74 publications

(9 citation statements)

References 14 publications

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“…Similar results have also been reported for the CBE growth of InP using PH31~.ls and TBP. 2s In this work, the highest mobilities were 3630 and 21800 cm2/Vs at 300 and 77K, respectively, with a net carrier concentration in the 1015 cm -3 range for the sample grown at 485~ These values are comparable to the data reported by Chin et al 29,3~ for CBE growth using BPE, but somewhat lower than the data reported earlier for the CBE growth of InP using TBP 2s and PH~ 1~, 18 The low mobilities reported here may be attributed to the impurity build-up at the substrate interface reported by Chin et al, 2~,3~ the impurities in the BPE, or the relatively thin epilayer thicknesses. Figure 7 shows the 14K PL spectra for InP samples grown at temperatures between 430 and 500~ with a V/III ratio of 53 and a cracker cell temperature of 800~ Previous reports for InP layers grown using PH 3 or TBP by both the CBE 36 and OMVPE techniques 23-25 have assigned the peak located at about 875 nm to bound exciton recombination while the lower energy peak near 897 nm is attributed to a combination of free electron to acceptor (e,A) and donor-acceptor pair (DAP) transitions.…”

Section: Resultssupporting

confidence: 71%

Chemical beam epitaxial growth of inp using EDMIn and BPE

Kim

Sadwick

Stringfellow

1997

J. Electron. Mater.

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The effect of the growth temperature on the quality of InP grown by chemical beam epitaxy (CBE) using ethyldimethylindium (EDMIn) and bisphosphinoethane (BPE) are presented. The growth rate was nearly independent of growth temperature, BPE flow rate, and cracker cell temperature in the range from 700 to 900~ Smooth and mirror-like surfaces were obtained for all of the samples grown at temperatures above 465~ All of the InP samples were n-type. As the growth temperature increased, the net carrier concentration decreased and reached a minimum value of 3.2 • 10 ~ cm -3 at 485~ The electron mobility increased with increasing growth temperature, reaching values of 3630 and 21800 cm2/Vs at 300 and 77K, respectively. The photoluminescence was found to depend strongly on the growth temperature. Excitonic luminescence was detected only for growth temperatures above 465~ The intensity of the band edge emission is comparable to that of the acceptor related emission for layers grown at 465~ At 485~ the band-edge recombination is dominant and the acceptor related emission is barely observable. As the growth temperature increased from 465 to 485~ the full width at half maximum of the bound exciton peak decreased from 6.8 to 3.5 meV at 14K. This trend was consistent with the decrease in the impurity concentration deduced from the Hall effect measurements.

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Section: Resultssupporting

confidence: 71%

Chemical beam epitaxial growth of inp using EDMIn and BPE

Kim

Sadwick

Stringfellow

1997

J. Electron. Mater.

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“…Carbon is a known low-diffusivity impurity atom in III-V materials, which may be unintentionally incorporated during metalorganic based epitaxy; the polarity and concentration vary with specific grown materials and precursors, and growth conditions. [24][25][26][27][28] Considering that NW sidewalls are exposed to MO material during the entire growth process (moreover, usually growth precursors diffuse along the sidewalls to reach the catalyst), [29][30][31][32] it is reasonable to assume a high unintentional carbon sidewall concentration in such growth systems (MOVPE and MOMBE). Figure 5 shows band diagrams for the exponential doping profile.…”

Section: Resultsmentioning

confidence: 99%

Surface depletion effects in semiconducting nanowires having a non-uniform radial doping profile

Calahorra

Ritter

2013

Journal of Applied Physics

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Doping profile has a significant effect on nanowire (NW) electrostatics, an effect that is expected to influence NW contact and transport properties. Herein, the electrostatic potential of nanowires (NWs) of non-uniform radial doping is calculated by two means: depletion approximation and a numerical calculation. Two profiles are considered: linear and exponential, corresponding to shallow and abrupt distributions; the results are compared to planar systems with similar doping profiles, and to uniformly doped NW systems. For a given average doping distribution, a nonuniform doping profile results in significantly lower carrier concentrations, an effect which intensifies with doping non-uniformity. Furthermore, in some cases, band diagrams obtained for the exponential doping profile vary greatly from any uniform doping, indicating that unique properties are expected for such NWs. V C 2013 AIP Publishing LLC. [http://dx.

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“…Increasing the hydride cell temperature above 1123 K leads to an enhanced desorption of species from the high temperature zone. 14,15 At cracker temperatures below 1123 K, for which the pyrolysis efficiency decreases, the acceptor concentration is approximately constant, whereas the shallow and deep donor concentrations are increasing. Therefore we can conclude that acceptors are related to the TMIn used in our system, whereas the shallow and deep donor incorporation is affected by the phosphine.…”

Section: ϫ3mentioning

confidence: 99%

“…With a TMIn flow rate of 1.6 sccm and a phosphine flow rate of 4.6 sccm material was obtained with a mobility of 186 000 cm 2 /V s at a temperature of 60 K and impurity concentrations of 8ϫ10 13 , 4ϫ10 14 , and 4ϫ10 14 cm Ϫ3 for n A , n DD , and n SD , respectively.…”

Section: ϫ3mentioning

confidence: 99%

Heterogeneous hydride pyrolysis in a chemical beam epitaxy cracker cell and growth of high quality InP

Rongen

Leys

Hall

et al. 1997

Journal of Vacuum Science &Amp; Technology A: Vacuum, Surfaces, and Films

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The decomposition of phosphine and arsine in a chemical beam epitaxy cracker cell was investigated with a quadrupole mass spectrometer. We have determined the kinetical parameters for a unimolecular reaction of the first order, i.e. the activation energy and frequency factor, from the decomposition efficiency as a function of temperature. These results are compared with data from literature. We find the lowest activation energies ever reported for the hydride pyrolysis, namely 72 and 48 kJ/mol for phosphine and arsine, respectively. This is due to the heterogeneous decomposition on catalytic molybdenum baffles inside the cracker cell. Additionally, we have studied the impurity incorporation in epitaxially grown bulk InP layers in relation to the efficiency of this particular molybdenum containing cracker cell. Impurity levels were determined by fitting calculated Hall values to experimental data. The best quality is achieved for the cracker temperature at which the efficiency starts to saturate. At this cracker temperature, optimized mass flow rates resulted in InP layers with a maximum mobility of 186 000 cm 2 /V s and impurity concentrations in the low 10 14 cm Ϫ3 range.

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Chemical beam epitaxy of indium phosphide

Cited by 74 publications

References 14 publications

Chemical beam epitaxial growth of inp using EDMIn and BPE

Chemical beam epitaxial growth of inp using EDMIn and BPE

Surface depletion effects in semiconducting nanowires having a non-uniform radial doping profile

Heterogeneous hydride pyrolysis in a chemical beam epitaxy cracker cell and growth of high quality InP

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