InxGa1−xAsyP1−y alloy stabilization by the InP substrate inside an unstable region in liquid phase epitaxy

Quillec, M.; Daguet, C.; Benchimol, J.L.; Launois, H.

doi:10.1063/1.93078

Cited by 74 publications

(10 citation statements)

References 6 publications

Supporting

Mentioning

Contrasting

Order By: Relevance

“…In MBE growth, which is commonly thought to be far from thermodynamic equilibrium, the growth kinetics may play an important role in determining the material structure. Furthermore, several researchers pointed out that as the depositing layer is slightly mismatched to the substrate, the effect of the resulting coherent strain may decrease the critical temperature of the spinodal point [10,11]. This would allow the meta-stable growth in the immiscibility region as shown in Fig.…”

Section: Methodsmentioning

confidence: 96%

InAsPSb quaternary alloy grown by gas source molecular beam epitaxy

Tsai¹,

Wang²,

Wu³

et al. 2007

Journal of Crystal Growth

View full text Add to dashboard Cite

Section: Methodsmentioning

confidence: 96%

InAsPSb quaternary alloy grown by gas source molecular beam epitaxy

Tsai¹,

Wang²,

Wu³

et al. 2007

Journal of Crystal Growth

View full text Add to dashboard Cite

“…If a stabilization effect by the epitaxial substrate is taken into account, an excess term may be added to the Gibbs energy as a consequence of elastic strain [1][2][3] : This relation which was earlier established [3] is only available in the pure elastic strain case (laasubl/a 10-3); E is the Young's modulus and v the Poisson's ratio of one of the limiting III V compounds taken as a reference ; the composite elastic constant, E/(1v), which depends on the substrate orientation (Brantley [20]), is expressed in dynes. cm -2 units ; asub is the lattice parameter of the substrate.…”

Section: Iismentioning

confidence: 99%

“…On both figures, tie-lines joining the compositions of the two-phase field, are represented. Experimental points of Quillec et al [2] are quoted as large circles. By comparison with these experiments or earlier calculations [1, 23] one can see :…”

Section: Iismentioning

confidence: 99%

“…Phase diagrams, calculated from the limiting binary systems, are useful for predicting experimental conditions of temary or quatemary crystal growth. A strain energy term associated with lattice mismatch may be introduced [1][2][3] in the Gibbs energy of the alloy. On the other hand, partial shortrange clustering of like atoms in the zinc-blende sublattices allows better understanding of III V phase diagrams : the authors [3] have shown the peculiar importance of this clustering tendency for the shape and the locus of miscibility gaps in three or four component systems.…”

Section: Introductionmentioning

confidence: 99%

See 1 more Smart Citation

Thermodynamic analysis of the short-range clustering in III V solid solutions

Marbeuf

Guillaume

1984

Rev. Phys. Appl. (Paris)

View full text Add to dashboard Cite

2014 Une généralisation du formalisme « D.L.P. » de Stringfellow prenant en compte la tendance aux amas a éié appliquée à la fois aux alliages pseudobinaires, pseudoternaires et pseudoquaternaires III V. Pour les alliages où les sous-réseaux sont à deux sites, cette tendance est traduite, pour chaque sous-réseau de la « blende de zinc » par un paramètre d'ordre à courte distance 03B1i-j positif, dépendant de la température et de la composition. Les valeurs obtenues pour 03B1Ga-In démontrent que, pour la série GaxIn1-xX (X = Sb, As, P), la tendance s'accroît lorsque l'on passe de Sb(03B1Ga-In(1/2, 700°C) = 0,04) à P (03B1Ga-In(1/2, 700°C) = 0,08), tandis que InAsyP1-y, et dans une moindre mesure GaAsyP1-y, comportent une répartition aléatoire des atomes As et P. Pour un pseudoquaternaire, le modèle prévoit une variation linéaire de 03B1i-j avec la composition de l'autre sous-réseau. Les lacunes de miscibilité calculées sont en accord avec les résultats expérimentaux connus pour GaxIn1-xP et GaxIn1-xAsyP1-y : les températures critiques sont respectivement 750 °C et 880 °C. Par contre le modèle ne peut expliquer une lacune de miscibilité à forme asymétrique comme dans le cas de GaAsySb1-y si l'entropie d'excès se réduit à une entropie de configuration. Abstract 2014 An extension of the « D.L.P. » theory of Stringfellow taking clustering into account has been applied both to pseudobinary, pseudoternary and pseudoquaternary III V alloys. For alloys with two sites sublattices, this clustering tendency is introduced in each sublattice of the zinc blende through a positive short-range order parameter 03B1i-j depending on temperature and composition. It is shown that clustering increases in the GaxIn 1-xX serie (X = Sb, As, P) from the antimonide (03B1Ga-In(1/2, 700°C) = 0.04) to the phosphide (03B1Ga-In(1/2, 700°C) = 0.08) whereas GaASyP1-y and mainly InAsyP1-y have quite random AsP distribution. For pseudoquaternaries the model predicts a linear variation of 03B1i-j versus the composition of the other sublattice. The calculated miscibility gaps are in good agreement with known experimental results for GaxIn1-xP and GaxIn1-xAsyP1-y (the critical temperatures are respectively 750 and 880 °C), whereas the model does not explain an asymmetrical shape of miscibility gap as in the case of GaAsySb1-y if the excess entropy reduces only to a configurational one.

show abstract

“…The existence of immiscible regions in some III-V alloy semiconductors was first pointed out by Müller and Richards 1) and experimental evidence of the miscibility gap in the alloys has been reported by several researchers. [2][3][4][5][6][7] Theoretical studies on the immiscibility have also been conducted for the quaternary III-V alloy semiconductors. 8,9) The miscibility gap is attributable to a curve of the free energy versus composition which is concave upward in some composition regions.…”

mentioning

confidence: 99%

Close Correlation between Enthalpy of Mixing and Internal Strain Energy in III–V Compound Alloys

Oyama

Uda

Ikegami

et al. 1999

Jpn. J. Appl. Phys.

View full text Add to dashboard Cite

The correlation of enthalpy of mixing and internal strain energy calculated by the elastic sphere model has been studied for III-V ternary alloy semiconductors of the AB 0.5 C 0.5 type. A plot of the enthalpy of mixing and the internal strain energy on a plane for 18 different alloy systems shows nearly linear correlation. This result strongly supports the conclusion drawn in our previous paper that the immiscibility domains, in which the alloys are not formed completely, for III-V alloys can be predicted simply from the isoenergy chart obtained by the elastic sphere model.

show abstract

InxGa1−xAsyP1−y alloy stabilization by the InP substrate inside an unstable region in liquid phase epitaxy

Cited by 74 publications

References 6 publications

InAsPSb quaternary alloy grown by gas source molecular beam epitaxy

InAsPSb quaternary alloy grown by gas source molecular beam epitaxy

Thermodynamic analysis of the short-range clustering in III V solid solutions

Close Correlation between Enthalpy of Mixing and Internal Strain Energy in III–V Compound Alloys

Contact Info

Product

Resources

About