Substrate temperature dependence of GaAs, GaInAs, and GaAlAs growth rates in metalorganic molecular beam epitaxy

Abstract

The substrate temperature (Ts) dependence (350–700 °C) of GaAs and Ga1−y InyAs growth rates was investigated in metalorganic molecular beam epitaxy (MOMBE), using triethylgallium (TEG), trimethylindium (TMI), and solid arsenic (As4) sources. For GaAs growth, four distinct Ts dependent regions are observed, including a weak desorption process (500–650 °C) characteristic of MOMBE, preceding atomic Ga desorption (Ts >650 °C). When adding a TMI flux to grow Ga1−yInyAs, this desorption process was much enhanced up to 550 °C, and then decreased above 550 °C when the In desorption phenomenon takes place. Correlatively, the In alloy composition peaks at 550 °C. The same dependence was observed in Ga1−yInyAs growth using solid In and TEG sources. However, in Ga1−xAlxAs growth using solid Al or triethylaluminum (TEA) and TEG sources, the weak desorption observed in GaAs MOMBE was strongly minimized. From these results, possible growth mechanisms are discussed.

Compositional modulation and surface stability in InGaP films: Understanding and controlling surface properties

“…This rather complex scenario where one species surface concentration may affect or hinder another species incorporation has been shown by several authors in the past. 34,35 Our experimental results point to an effect of surface relaxation processes-diffusion in particular-to the behavior reported here for our InGaP samples. Indeed, Fig.…”

Ga and In incorporation rates in Ga1−xInxAs growth by chemical beam epitaxy

“…2). A similar result in the decrease of the GaAs growth rate in Ga 1 À x In x As was previously found by Kobayashi et al [22], using solid As instead of TBAs as arsenic source, around T s ¼550 1C, but 6. RBS spectra of a sample including 4 Ga 1 À x In x As layers and 3 GaAs spacers (dots).…”

Mixed alkyl exchange and exploitable surface interactions in InGaN by NH3-based metal organic molecular beam epitaxy

“…As physisorbed In and In-methyl species ride on the surface, methyl ligands strongly bond to excess Ga atoms made available via facile b-elimination [24,25]. The surface layer has been shown to enhance desorption of Ga-alkyls in the case of In covered GaAs [26] and InGaAs with TMIn [27]. The latter case proposed Ga-ethyl desorption, but no direct evidence identifying Ga-ethyl (vs. Ga-methyl) species was given.…”