TEM study of the morphological and compositional instabilities of InGaAsP epitaxial structures

Patriarche, G.; Roux, G. Le; Largeau, L.; Mereuta, A.; Ougazzaden, A.; Benchimol, J.L.

doi:10.1016/s0022-0248(00)00641-2

Cited by 15 publications

(8 citation statements)

References 9 publications

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“…The observation of an anisotropy in both composition modulation and surface topology between the two 0 1 1 hi directions in the 0.6% tensile strained In 0.65 Ga 0.35 As 0.6 P 0.4 film found in this study agrees with previous observations in a 0.6% tensile strained In 0.45 Ga 0.55 As film [5]. Similar results have been reported by other authors in III-V and II-VI alloy epitaxy systems [3,4,7,16,17]. In this study, however, we observed another interesting phenomenon: with an increase in the misfit between substrate and film from 0.6% to 2%, the composition modulation and surface undulation are no longer anisotropic but occur in both of the ½0 % 1 11 and [0 1 1] directions.…”

Section: Discussionsupporting

confidence: 93%

“…There are many interesting results on the nature of composition modulations in In 1Àx Ga x As y P 1Ày heteroepitaxial strained films [1][2][3][4][5][6][7][8]. Early studies, in samples grown by liquid phase epitaxy, suggested that the composition modulations always occurred in 0 0 1 hi directions [1,2].…”

Section: Introductionmentioning

confidence: 99%

“…Early studies, in samples grown by liquid phase epitaxy, suggested that the composition modulations always occurred in 0 0 1 hi directions [1,2]. However, later studies have shown that the composition modulation in thin films grown by vapor deposition on solid substrates occurs along 0 1 1 hi directions, not the elastically soft 0 0 1 hi directions, and is anisotropic between [0 1 1] and ½0 % 1 11 directions [4][5][6][7]. The presence of a composition modulation also depends on the sign of strain built into the strained layer: the composition modulation in a film under tension is much stronger than that in a film grown under compression but with the same stress magnitude [8].…”

Section: Introductionmentioning

confidence: 99%

“…The presence of a composition modulation also depends on the sign of strain built into the strained layer: the composition modulation in a film under tension is much stronger than that in a film grown under compression but with the same stress magnitude [8]. Moreover, composition modulations coupled with morphological undulations have been observed in InGaAsP films grown by chemical beam epitaxy (CBE) [7]. The explanation for the origin of this composition modulation is controversial.…”

Section: Introductionmentioning

confidence: 99%

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Composition modulations in tensile strained In1−xGaxAsyP1−y films grown on (100) InP substrates

Weatherly

2001

Journal of Crystal Growth

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Access and use of this website and the material on it are subject to the Terms and Conditions set forth at Composition modulations in tensile strained In1-xGxAsyP1-y films grown on (1 0 0 ) InP substrates Wu, X.; Weatherly, G. C.http://nparc.cisti-icist.nrc-cnrc.gc.ca/npsi/jsp/nparc_cp.jsp?lang=fr L'accès à ce site Web et l'utilisation de son contenu sont assujettis aux conditions présentées dans le site LISEZ CES CONDITIONS ATTENTIVEMENT AVANT D'UTILISER CE SITE WEB. NRC Publications Record / Notice d'Archives des publications de CNRC:http://nparc.cisti-icist.nrc-cnrc.gc.ca/npsi/ctrl?action=rtdoc&an=12744459&lang=en http://nparc.cisti-icist.nrc-cnrc.gc.ca/npsi/ctrl?action=rtdoc&an=12744459&lang=fr READ THESE TERMS AND CONDITIONS CAREFULLY BEFORE USING THIS WEBSITE.http://nparc.cisti-icist.nrc-cnrc.gc.ca/npsi/jsp/nparc_cp.jsp?lang=en Vous avez des questions? Nous pouvons vous aider. Pour communiquer directement avec un auteur, consultez la première page de la revue dans laquelle son article a été publié afin de trouver ses coordonnées. Si vous n'arrivez pas à les repérer, communiquez avec nous à PublicationsArchive-ArchivesPublications@nrc-cnrc.gc.ca. Questions? Contact the NRC Publications Archive team atPublicationsArchive-ArchivesPublications@nrc-cnrc.gc.ca. If you wish to email the authors directly, please see the first page of the publication for their contact information. NRC Publications Archive Archives des publications du CNRCThis publication could be one of several versions: author's original, accepted manuscript or the publisher's version. / La version de cette publication peut être l'une des suivantes : la version prépublication de l'auteur, la version acceptée du manuscrit ou la version de l'éditeur. For the publisher's version, please access the DOI link below./ Pour consulter la version de l'éditeur, utilisez le lien DOI ci-dessous.http://doi.org/10.1016/S0022-0248(01)01574-3 Growth, 233, 1, pp. 88-98, 2001 Journal of Crystal Growth 233 (2001) Journal of Crystal AbstractThe correlation between compositional modulations and surface morphology has been studied by transmission electron microscopy (TEM) and atomic force microscopy (AFM) for a series of tensile strained In 1Àx Ga x As y P 1Ày films grown by molecular beam epitaxy (MBE) on (1 0 0) InP substrates. At low values of strain (0.6%), both a quaternary In 0.65 Ga 0.35 As 0.6 P 0.4 film and ternary In 0.45 Ga 0.55 As film show anisotropic behavior (both with regards to composition modulation and surface morphology) between [0 1 1] and ½0 % 1 11 cross-sections. The composition modulation and surface undulation are prominent only in the ½0 % 1 11 cross-section. The In 0.45 Ga 0.55 As films develop a coarse faceted structure on (4 1 1) and 4 % 1 1 % 1 1 ÀÁ planes after B100 nm of film growth. Composition modulations (scaling with the size of the facets) are observed in films 0.1-1 mm thick, but in thicker films (>1 mm) the faceted structure disappears while the scale of the compositional modulations decays to that found in unstrained films. On...

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Section: Discussionsupporting

confidence: 93%

Section: Introductionmentioning

confidence: 99%

Section: Introductionmentioning

confidence: 99%

Section: Introductionmentioning

confidence: 99%

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Composition modulations in tensile strained In1−xGaxAsyP1−y films grown on (100) InP substrates

Weatherly

2001

Journal of Crystal Growth

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“…1. It should be noted that in strained InGaAsP epitaxial structures grown on InP, undulations parallel to only one h110i direction have also been reported [5]. 3.2 Loading-unloading curves and hardness Figure 3 1 ) shows loading and unloading curves in InP/AlP sample as well as the curves in InP and GaAs.…”

Section: Superlattice Morphologymentioning

confidence: 90%

Strength Enhancement of Compensated Strained InP/AlP Superlattice

Bourhis¹,

Patriarche²

2002

phys. stat. sol. (a)

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Compensated strained InP/AlP superlattices have been epitaxially grown on GaAs substrate by molecular-beam epitaxy. The period of the superlattice was chosen so that no plastic relaxation occurred in the layers. The superlattice structure was characterized by transmission electron microscopy and nanoindentation was used to test the mechanical performance of the superlattice. We have observed a very strong enhancement of hardness and yield strength that we have compared to previously reported behaviour of strain-free AlAs/GaAs superlattices.

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Surface Morphological and Nanomechanical Properties of PLD-Derived ZnO Thin Films

et al. 2008

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This study reports the surface roughness and nanomechanical characteristics of ZnO thin films deposited on the various substrates, obtained by means of atomic force microscopy (AFM), nanoindentation and nanoscratch techniques. ZnO thin films are deposited on (a- and c-axis) sapphires and (0001) 6H-SiC substrates by using the pulsed-laser depositions (PLD) system. Continuous stiffness measurements (CSM) technique is used in the nanoindentation tests to determine the hardness and Young’s modulus of ZnO thin films. The importance of the ratio (H/Efilm) of elastic to plastic deformation during nanoindentation of ZnO thin films on their behaviors in contact-induced damage during fabrication of ZnO-based devices is considered. In addition, the friction coefficient of ZnO thin films is also presented here.

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TEM study of the morphological and compositional instabilities of InGaAsP epitaxial structures

Cited by 15 publications

References 9 publications

Composition modulations in tensile strained In1−xGaxAsyP1−y films grown on (100) InP substrates

Composition modulations in tensile strained In1−xGaxAsyP1−y films grown on (100) InP substrates

Strength Enhancement of Compensated Strained InP/AlP Superlattice

Surface Morphological and Nanomechanical Properties of PLD-Derived ZnO Thin Films

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