a b s t r a c tIn the present work, Cu 2 ZnSnS 4 (CZTS) thin film was deposited onto the glass substrate by simple and economic SILAR method and its structural, morphological, optical and electrical properties were analyzed Q2 . X-ray diffraction (XRD) analysis confirms the formation of CZTS with kesterite structure and the average crystallite size is found to be 142 nm. Scanning electron microscope (SEM) image shows that the film has homogeneous, agglomerated surface without any cracks. The prepared CZTS film shows good optical absorption (10 4 cm −1 ) in the visible region and the optical band gap energy is found to be quite close to the optimum value of about 1.54 eV for solar cell application. The refractive index of the prepared film is found to be 2.85. The electrical resistivity of the film is found to be ∼10 −2 cm at room temperature.

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This work describes the photoelectrochemical (PEC) performance of Ag 2 ZnSnSe 4 (AZTSe) thin films prepared on various conductive substrates such as Al, Cu, Ag, and conventional glass by a thermal evaporation method. The X-ray diffraction analysis confirms that the deposited films are the pure tetragonal structure of AZTSe. The scanning electron microscope (SEM) images show polygonal-shaped and spherical-rich particles, which are uniformly distributed over the substrates and are densely packed. By comparing the SEM images, the average particle size of Ag/AZTSe film seems to be higher than that of the other films. The energy-dispersive X-ray analysis is witnessed for nearly stoichiometric values for the films. The optical absorption coefficient of AZTSe thin films is found to be about 10 4 cm −1 and its band gap is found in the range of 1.54−2.15 eV. The Mott−Schottky plot shows n-type conductivity for all of the films. The J−V plot confirms the photoactivity for all of the films. Among the films, the Ag/AZTSe film shows higher power conversion efficiency of about 0.32%. However, further investigation is needed to optimize the thickness of the conductive layer for improving the efficiency of photoelectrochemical cell in comparison to that of the industrially established materials.

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