Influence of Substrates on the Photoelectrochemical Performances of Ag₂ZnSnSe₄ Thin Films

Abstract

This work describes the photoelectrochemical (PEC) performance of Ag 2 ZnSnSe 4 (AZTSe) thin films prepared on various conductive substrates such as Al, Cu, Ag, and conventional glass by a thermal evaporation method. The X-ray diffraction analysis confirms that the deposited films are the pure tetragonal structure of AZTSe. The scanning electron microscope (SEM) images show polygonal-shaped and spherical-rich particles, which are uniformly distributed over the substrates and are densely packed. By comparing the SEM images, the average particle size of Ag/AZTSe film seems to be higher than that of the other films. The energy-dispersive X-ray analysis is witnessed for nearly stoichiometric values for the films. The optical absorption coefficient of AZTSe thin films is found to be about 10 4 cm −1 and its band gap is found in the range of 1.54−2.15 eV. The Mott−Schottky plot shows n-type conductivity for all of the films. The J−V plot confirms the photoactivity for all of the films. Among the films, the Ag/AZTSe film shows higher power conversion efficiency of about 0.32%. However, further investigation is needed to optimize the thickness of the conductive layer for improving the efficiency of photoelectrochemical cell in comparison to that of the industrially established materials.

Design of Ag Injection in Bi2S3 (AgBiS2) Thin Films for Photoelectrochemical Cell and Solar Cell Applications

“…The values of these regions are tabulated in Table 3. Fill factor ((V max J max /V oc J sc ) x 100)) and photoconversion e ciency ((η (%) = (V oc J sc x FF x 100) / P in )) are calculated using the formulae [50] and the values are given in table 4. From gure 16 it is observed that all the lms exhibited cathodic photocurrent which leads to the reduction of the hole scavenger at the surface of the working electrode that con rms that the prepared Ag x Bi 2-x S 3-y (x= y= 0.25, 0.50, 0.75 and 1) thin lms are 'p' type in nature [2,51,37].…”

“…The values of these regions are tabulated in Table 3. [50] and it is presented in Table 3. The carrier concentration of FTO/Ag x Bi 2-x S 3-y (x= y = 0) lm is found to be 6.23 x10 19 cm -3 which is well accordance with Hall effect analysis (table 2).…”

“…The carrier concentration of FTO/Ag x Bi 2-x S 3-y (x= y = 0) lm is found to be 6.23 x10 19 cm -3 which is well accordance with Hall effect analysis (table 2). Interestingly, the carrier concentrations for the remaining lms under liquid medium lie in the optimal range about 7.39 x 10 17 cm -3 , 7.21 x10 17 cm -3 , 6.57 x10 17 cm -3 and 6.11 Fill factor ((V max J max /V oc J sc ) x 100)) and photoconversion e ciency ((η (%) = (V oc J sc x FF x 100) / P in )) are calculated using the formulae [50] and the values are given in table 4. From gure 16 it is observed that all the lms exhibited cathodic photocurrent which leads to the reduction of the hole scavenger at the surface of the working electrode that con rms that the prepared Ag x Bi 2-x S 3-y (x= y= 0.25, 0.50, 0.75 and 1) thin lms are 'p' type in nature [2,51,37].…”

Impact of Antisite Defect Complex on Optical and Electrical Properties of Ag2ZnSnSe4 Thin Films

“…The peaks observed at 181 and 250 cm −1 reveal the formation of AZTSe and ZnSe phases, respectively . Till date, not many reports are available on the Raman analysis of AZTSe thin films . Therefore, Raman data of binary and ternary chalcogenides were used to validate the Raman peak at 198 cm −1 .…”

“…Therefore, Raman data of binary and ternary chalcogenides were used to validate the Raman peak at 198 cm −1 . Table shows the list of Raman modes of various possible chalcogenides . No Raman vibrational mode at 198 cm −1 corresponds to any one of the binary and ternary chalcogenides and hence is attributed to the AZTSe phase.…”