Impact of Antisite Defect Complex on Optical and Electrical Properties of Ag₂ZnSnSe₄ Thin Films

Abstract

Herein, preparation of Ag2ZnSnSe4 (AZTSe) thin films using physical vapor deposition followed by selenization in a quartz tube with rapid thermal process (RTP) is reported. The precursor stacks, [Sn/Se/ZnSe/Se/Ag/Se] × 4, are deposited onto the glass substrate at 100 °C using the combination of thermal and e‐beam evaporation methods. The post selenization of precursors is conducted at different temperatures (300–425 °C). The X‐ray diffraction and Raman spectra of the precursor films selenized at 400 °C reveal the formation of single‐phase AZTSe, exhibiting a kesterite structure with a preferred orientation along the (112) plane. These films show larger grains of ≈230 nm with the homogeneous distribution of Ag, Zn, Sn, and Se across the film thickness. The precursor films selenized at temperatures ≤400 °C show the fundamental absorption edge of AZTSe (Eg = 1.36–1.44 eV) as well as an additional adsorption edge (Eadd = 1.31–1.32 eV) corresponding to ZnSn + SnZn defect complex. The Hall effect measurement indicates n‐type conductivity irrespective of selenization temperature. For films selenized at 400 °C, the carrier concentration is decreased to 2.83 × 1011 cm−3 and results in a high mobility of 73.9 cm2(V s)−1, which is attributed to the reduction of SnZn defects.

Effect of Pre‐annealing Treatment on Growth and Properties of (Cu0.5Ag0.5)2ZnSnSe4 Thin Films

“…The presence of a sharp interference pattern in the reflectance spectra suggests that selenized thin films have a specular nature, implying a low probability of scattering. Equation (1) and (2) were used to calculate the optical absorption coefficient ( α ) and optical bandgap ( E g ) from the acquired transmittance, reflectance spectra, and thickness ( t ) of selenized CAZTSe thin films [ 49,50 ] …”

Role of tellurium addition on the linear and non‐linear optical, structural, morphological properties of Ag60‐xSe40Tex thin films for nonlinear applications

“…Similarly, the introduction of Te in the Ag 60 Se 40 matrix results in additional peaks at 167 and 127 cm −1 . The peak at 127 cm −1 corresponds to the β‐phase of Ag 2 Se vibrational bond 38 and the 167 cm −1 39 sharp peak corresponds to the Te‐Te homopolar bond which got shifted toward a higher wavenumber value at 172 cm −1 due to the higher concentration of Te in Ag‐Se matrix.…”

Numerical simulation of graphene/Ag₂ZnSnSe₄ induced p-n junction solar cell

“…一个解决的办法是利用具有更大离子半 径的其他元素取代Cu离子或Zn离子, 从而提高反 位缺陷的形成能. 银锌锡硒(Ag 2 ZnSnSe 4 , AZTSe) 是一种新型的光伏半导体材料, 理论计算和实验都 表明AZTSe中的Ag Zn 反位缺陷具有高的形成能 [7,8] . AZTSe是一种n型半导体材料, 禁带宽度为1.4 eV, 非常适合作为太阳电池的吸收层 [9,10] .…”