AgSbS2 and Ag3SbS3 absorber materials for photovoltaic applications

Daniel, T.; Henry, J.; Mohanraj, K.; Sivakumar, G.

doi:10.1016/j.matchemphys.2016.06.077

Cited by 27 publications

(9 citation statements)

References 18 publications

(18 reference statements)

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“…According to the result of theoretical calculation, the limited power conversion efficiency (PCE) of Sb 2 (S,Se) 3 can reach to ≈30% . For boosting the exploration of Sb 2 (S,Se) 3, the incorporation of metal cations such as Na, Cu, Mn, Fe, and Ag have been conducted. Meanwhile, methods such as rapid thermal evaporation, chemical bath deposition, atomic layer deposition, close‐space sublimation, electro‐deposition, co‐evaporation, sputtering, thermal evaporation, and solution methods have been employed to improve the power conversion efficiency (PCE) of Sb 2 (S,Se) 3 thin film solar cells.…”

Section: Introductionmentioning

confidence: 99%

Promising Sb₂(S,Se)₃ Solar Cells with High Open Voltage by Application of a TiO₂/CdS Double Buffer Layer

Wang¹,

Wang²,

Chen³

et al. 2018

Solar RRL

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Sb 2 (S,Se) 3 has gathered a lot of attention recently as a promising alternative absorber material. However, the efficiencies of Sb 2 (S,Se) 3 devices are seriously restricted by the low open circuit voltage (V oc ). In this work, Sb 2 (S, Se) 3 devices equipped with a TiO 2 /CdS double buffer layer are prepared by a hydro-thermal method, which aims to overcome the V oc deficit. The obtained average V oc of the devices is 785 mV and the champion efficiency of 5.73% is also achieved with a highest V oc ¼ 792 mV, Jsc ¼ 12.03 mA cm À2 , FF ¼ 60.9%. The improvement of V oc is benefited from the reduced band gap offset after application of the double buffer layer. The non-encapsulated device could keep an average power conversion efficiency of 5.69% after being stored in ambient air over a month. This indicates the great potential of a double buffer layer in new chalcogenide photovoltaic devices.

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Section: Introductionmentioning

confidence: 99%

Promising Sb₂(S,Se)₃ Solar Cells with High Open Voltage by Application of a TiO₂/CdS Double Buffer Layer

Wang¹,

Wang²,

Chen³

et al. 2018

Solar RRL

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“…Ag 3 SbS 3 is an important narrow band-gap semiconductor, which shows potential applications as piezoelectric and nonlinear optical material, Ag + ionic conductor, , as well as solar absorber. − The structure of Ag 3 SbS 3 was first determined based on mineral . Then, single crystal , and powder forms of Ag 3 SbS 3 samples have been synthesized with many methods. , However, no studies have been focused on the shape-controllable growth and facet-dependent properties of this material.…”

Section: Introductionmentioning

confidence: 99%

Shape Control of Ternary Sulfide Nanocrystals

Yuan

Xie

et al. 2018

Crystal Growth & Design

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Synthesis of semiconductor nanocrystals with a definite shape is the foundation of their anisotropy properties investigation; however, it is more challenging in ternary metal sulfides than that of noble metal and binary sulfides. In this paper, we report a solvent polarity control strategy to prepare a family of ternary sulfide (Ag 3 SbS 3 ) semiconductor nanocrystals with tunable polyhedral shapes. The crystal growth speed along different directions was confined by the capping effect of the polarity of solvents that was defined by reaction temperature. Crystal shape of Ag 3 SbS 3 nanocrystals could be tailored as a sphere, hexagonal plate, and prism. A shape-controllable growth mechanism was analyzed based on the Bravais−Friedel− Donnay−Harker theory by taking crystal structure characteristics and the polarity of solvents into consideration. The semiconductor nanocrystals show a near value of the band gaps for different shaped samples and facetdependent photocatalytic water-splitting activities, which may result from the discrimination of the terminal surface structure and binding energy of Sb and S for the three different shaped nanocrystals. Thus, we provide a new crystal shape tunable strategy for ternary sulfide nanocrystal synthesis, which is important for optimizing properties and applications of sulfide semiconductor nanocrystals.

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“…Ternary semiconductor nanocrystals (NCs) with multivalent cations and composition‐dependent tunable band gaps, have potential applications in the field of thin‐film thermoelectrics and active absorbers in photovoltaic devices . Series of such NCs in group I‐III‐VI and I‐II‐IV‐VI semiconductors are extensively studied and explored for designing both light‐emitting and harvesting devices .…”

Section: Figurementioning

confidence: 99%

“…Ag 3 SbS 3 with hexagonal crystal phase, showed potential applications as a thermoelectric, a nonlinear optical material, and a photocatalyst . Ag 3 SbS 3 thin films, along with different shapes of Ag 3 SbS 3 NCs, as sphere, hexagonal plate, prism and nanorod, have been realized through both thermally‐evaporated methods or hydrothermal methods. These existing methods exposed some major drawbacks, such as toxic ligands and high temperature.…”

Section: Figurementioning

confidence: 99%

“…Te rnary semiconductor nanocrystals (NCs) with multivalent cations and composition-dependent tunable band gaps, have potential applications in the field of thin-film thermoelectrics and active absorbers in photovoltaic devices. [1][2][3][4][5][6] Series of such NCs in group I-III-VI and I-II-IV-VI semiconductors are extensively studied and explored for designing both light-emitting and harvesting devices. [7][8][9][10] Among different synthesis methods of these multinary NCs, in situ chemical conversion is one efficient protocol for keeping the intrinsic morphologies of starting materials.…”

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confidence: 99%

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Near‐Infrared Luminescent Ternary Ag₃SbS₃ Quantum Dots by in situ Conversion of Ag Nanocrystals with Sb(C₉H₁₉COOS)₃

Wang

Zhao

et al. 2018

Chemistry A European J

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Differently from the normal three single precursor method to produce colloidal ternary quantum dots (QDs), herein ternary Ag3SbS3 quantum dots (QDs) with efficient near‐infrared (NIR) luminescence have been prepared by a new facile in situ conversion of Ag nanocrystals (NCs) with a binary Sb/S organic precursor Sb(C9H19COOS)3 under low temperature. The unprecedented construction evolution from Ag NCs to Ag3SbS3/Ag hetero‐structure and final monodisperse Ag3SbS3 QDs has been demonstrated. These novel Ag3SbS3 QDs exhibit efficient NIR emission at ≈1263 nm and possess high colloidal stability.

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AgSbS2 and Ag3SbS3 absorber materials for photovoltaic applications

Cited by 27 publications

References 18 publications

Promising Sb₂(S,Se)₃ Solar Cells with High Open Voltage by Application of a TiO₂/CdS Double Buffer Layer

Promising Sb₂(S,Se)₃ Solar Cells with High Open Voltage by Application of a TiO₂/CdS Double Buffer Layer

Shape Control of Ternary Sulfide Nanocrystals

Near‐Infrared Luminescent Ternary Ag₃SbS₃ Quantum Dots by in situ Conversion of Ag Nanocrystals with Sb(C₉H₁₉COOS)₃

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AgSbS2 and Ag3SbS3 absorber materials for photovoltaic applications

Cited by 27 publications

References 18 publications

Promising Sb2(S,Se)3 Solar Cells with High Open Voltage by Application of a TiO2/CdS Double Buffer Layer

Promising Sb2(S,Se)3 Solar Cells with High Open Voltage by Application of a TiO2/CdS Double Buffer Layer

Shape Control of Ternary Sulfide Nanocrystals

Near‐Infrared Luminescent Ternary Ag3SbS3 Quantum Dots by in situ Conversion of Ag Nanocrystals with Sb(C9H19COOS)3

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Resources

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Promising Sb₂(S,Se)₃ Solar Cells with High Open Voltage by Application of a TiO₂/CdS Double Buffer Layer

Promising Sb₂(S,Se)₃ Solar Cells with High Open Voltage by Application of a TiO₂/CdS Double Buffer Layer

Near‐Infrared Luminescent Ternary Ag₃SbS₃ Quantum Dots by in situ Conversion of Ag Nanocrystals with Sb(C₉H₁₉COOS)₃