Vacuum evaporated FTO/(Cu, Ag)2ZnSnSe4 thin films and its electrochemical analysis

Henry, J.; Mohanraj, K.; Sivakumar, G.

doi:10.1016/j.vacuum.2018.11.055

Cited by 15 publications

(10 citation statements)

References 38 publications

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“…For CZTSe films deposited on ITO, the formation of SnO 2 phases is reported. However, the effect of SnO 2 on the electrical properties of solar cells has been found negligible [12,18].…”

Section: IIImentioning

confidence: 99%

“…The low efficiency in these solar cells is reported to be due to an interfacial reaction at ITO back contact, which induces the Indium diffusion into the CZTSSe absorber and formation of an oxide SnO x thin layer, thus degrading the CZTSSe rear interface [12]. CZTSSe based solar cells have also been deposited on FTO [13,[16][17][18], reaching efficiencies up to 7.7% using a Mo nanolayer at the CZTSSe/FTO interface [19]. Lee & al. reported a superstrate CZTSSe based solar cells deposited on ZnO wire and completed with a graphite electrode reaching efficiencies of 1.2 % [20].…”

Section: Introductionmentioning

confidence: 99%

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Comparative study of Cu2ZnSnSe4 solar cells growth on transparent conductive oxides and molybdenum substrates

Temgoua¹,

Bodeux

Mollica³

et al. 2019

Solar Energy

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Cu 2 ZnSnSe 4 (CZTSe) thin films have been synthetized by cosputtering followed by a selenization treatment on Mo and transparent conductive oxide (TCO) coated soda lime glass substrates, such as ZnO:Al and SnO 2 :F (FTO). The aims of the present work is to investigate the impact of the TCO substrates on the CZTSe growth, the reactions at the back contact and the electrical properties of solar cells. The results show that the morphology of CZTSe is affected by the TCO back contacts. It is found that TCO acts as a diffusion barrier of Na from soda lime glass to CZTSe. Thus low incorporation of Na during the annealing could explain the difference in grain size of CZTSe deposited on TCO. Moreover it is evidenced chemical reactions between TCO and CZTSe which affects the interface. While the efficiency up to 8 % is obtained for CZTSe based solar cells deposited on Mo substrate, the efficiency drops to 2.3 % for the solar cells deposited on FTO. The low efficiency is explained by the recombination at the back contact due to the formation of a very thin layer of ZnO at the CZTSe/FTO interface.

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“…For CZTSe films deposited on ITO, the formation of SnO 2 phases is reported. However, the effect of SnO 2 on the electrical properties of solar cells has been found negligible [12,18].…”

Section: IIImentioning

confidence: 99%

Section: Introductionmentioning

confidence: 99%

Comparative study of Cu2ZnSnSe4 solar cells growth on transparent conductive oxides and molybdenum substrates

Temgoua¹,

Bodeux

Mollica³

et al. 2019

Solar Energy

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“…The peaks observed at 181 and 250 cm −1 reveal the formation of AZTSe and ZnSe phases, respectively . Till date, not many reports are available on the Raman analysis of AZTSe thin films . Therefore, Raman data of binary and ternary chalcogenides were used to validate the Raman peak at 198 cm −1 .…”

Section: Resultsmentioning

confidence: 99%

“…Therefore, Raman data of binary and ternary chalcogenides were used to validate the Raman peak at 198 cm −1 . Table shows the list of Raman modes of various possible chalcogenides . No Raman vibrational mode at 198 cm −1 corresponds to any one of the binary and ternary chalcogenides and hence is attributed to the AZTSe phase.…”

Section: Resultsmentioning

confidence: 99%

Impact of Antisite Defect Complex on Optical and Electrical Properties of Ag₂ZnSnSe₄ Thin Films

Patil

Nagapure

Chandra

et al. 2020

Physica Status Solidi (a)

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Herein, preparation of Ag2ZnSnSe4 (AZTSe) thin films using physical vapor deposition followed by selenization in a quartz tube with rapid thermal process (RTP) is reported. The precursor stacks, [Sn/Se/ZnSe/Se/Ag/Se] × 4, are deposited onto the glass substrate at 100 °C using the combination of thermal and e‐beam evaporation methods. The post selenization of precursors is conducted at different temperatures (300–425 °C). The X‐ray diffraction and Raman spectra of the precursor films selenized at 400 °C reveal the formation of single‐phase AZTSe, exhibiting a kesterite structure with a preferred orientation along the (112) plane. These films show larger grains of ≈230 nm with the homogeneous distribution of Ag, Zn, Sn, and Se across the film thickness. The precursor films selenized at temperatures ≤400 °C show the fundamental absorption edge of AZTSe (Eg = 1.36–1.44 eV) as well as an additional adsorption edge (Eadd = 1.31–1.32 eV) corresponding to ZnSn + SnZn defect complex. The Hall effect measurement indicates n‐type conductivity irrespective of selenization temperature. For films selenized at 400 °C, the carrier concentration is decreased to 2.83 × 1011 cm−3 and results in a high mobility of 73.9 cm2(V s)−1, which is attributed to the reduction of SnZn defects.

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“…The Cu + , Zn 2+ , and Sn 4+ ions in Cu 2 ZnSnS 4 can be substituted by extrinsic ions. Ag doping can occupy the Cu site in the Cu 2 ZnSnS 4 lattice to reduce the harmful Cu Zn anti-site and V Cu defects because the formation energy of Ag Zn defect is higher than that of Cu Zn defect [8,9,10,11]. In addition, the band gap of Cu 2 ZnSnS 4 can be adjusted by Ag doping [12,13].…”

Section: Introductionmentioning

confidence: 99%

Fabrication of Ag and Mn Co-Doped Cu2ZnSnS4 Thin Film

Qiu

Tian

2019

Nanomaterials

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Ag and Mn dopants were incorporated into Cu2ZnSnS4 thin film to reduce defects in thin film and improve thin film properties. Sol–gel and spin-coating techniques were employed to deposit Ag and Mn co-doped Cu2ZnSnS4 thin films. The structures, compositions, morphologies, and optical properties of the co-doped thin films were characterized. The experimental results indicate the formation of kesterite structure without Ag and Mn secondary phases. The amount of Ag in the thin films is close to that in the sols. The co-doped Cu2ZnSnS4 thin films have an absorption coefficient of larger than 1.3 × 104 cm−1, a direct optical band gap of 1.54–2.14 eV, and enhanced photoluminescence. The nonradiative recombination in Cu2ZnSnS4 thin film is reduced by Ag and Mn co-doping. The experimental results show that Ag and Mn incorporation can improve the properties of Cu2ZnSnS4 thin film.

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Vacuum evaporated FTO/(Cu, Ag)2ZnSnSe4 thin films and its electrochemical analysis

Cited by 15 publications

References 38 publications

Comparative study of Cu2ZnSnSe4 solar cells growth on transparent conductive oxides and molybdenum substrates

Comparative study of Cu2ZnSnSe4 solar cells growth on transparent conductive oxides and molybdenum substrates

Impact of Antisite Defect Complex on Optical and Electrical Properties of Ag₂ZnSnSe₄ Thin Films

Fabrication of Ag and Mn Co-Doped Cu2ZnSnS4 Thin Film

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Vacuum evaporated FTO/(Cu, Ag)2ZnSnSe4 thin films and its electrochemical analysis

Cited by 15 publications

References 38 publications

Comparative study of Cu2ZnSnSe4 solar cells growth on transparent conductive oxides and molybdenum substrates

Comparative study of Cu2ZnSnSe4 solar cells growth on transparent conductive oxides and molybdenum substrates

Impact of Antisite Defect Complex on Optical and Electrical Properties of Ag2ZnSnSe4 Thin Films

Fabrication of Ag and Mn Co-Doped Cu2ZnSnS4 Thin Film

Contact Info

Product

Resources

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Impact of Antisite Defect Complex on Optical and Electrical Properties of Ag₂ZnSnSe₄ Thin Films