Articles you may be interested inFabrication and characterization of Cu(InGa)Se 2 solar cells with absorber bandgap from 1.0 to 1.5 eV AIP Conf.

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A novel structure, high conversion efficiency pSiC/graded pSiC/iSi/nSi/metal substratetype amorphous silicon solar cell J. Appl. Phys. 56, 538 (1984); 10.1063/1.333943 Influence of thin metal as a top electrode on the characteristics of PIN a Si:H solar cellsUsing a computer simulation, the effects of abrupt and graded a-Si:C:H/u-Si:H interfaces on the performance of a-Si:H p-i-n solar cells are discussed. It is shown that structures with graded heterojunction transitions possess much lower recombination near the junction and a higher accelerating built-in electric field in the i layer, both of which increase the open-circuit voltage and improve the solar cell fill factor. 5964

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