Band-gap engineering in CdS/Cu(In,Ga)Se2 solar cells

Topič, Marko; Smole, F.; Furlan, J.

doi:10.1063/1.362533

Cited by 84 publications

(48 citation statements)

References 6 publications

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“…With similar GGI ratios for the CIGS films deposited by the co-evaporation processes, the corresponding bandgap energies are nearly the same. Nevertheless, the CIGS films prepared by the three-stage process had a double grading bandgap structure, meaning that the bandgap energies at the notch point of the V-shape grading structure had lower values than the effective optical bandgap energies [35][36][37]. Thus, the absorption edge of the CIGS films prepared by the three-stage process extended to the longer wavelengths than those of the films prepared by the other evaporation processes, as shown in Figure 7.…”

Section: Characteristics Of Cigs Solar Cells Prepared By Various Depomentioning

confidence: 90%

Deposition Technologies of High-Efficiency CIGS Solar Cells: Development of Two-Step and Co-Evaporation Processes

et al. 2018

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Abstract:The two-step process including the deposition of the metal precursors followed by heating the metal precursors in a vacuum environment of Se overpressure was employed for the preparation of Cu(In,Ga)Se 2 (CIGS) films. The CIGS films selenized at the relatively high Se flow rate of 25 Å/s exhibited improved surface morphologies. The correlations among the two-step process parameters, film properties, and cell performance were studied. With the given selenization conditions, the efficiency of 12.5% for the fabricated CIGS solar cells was achieved. The features of co-evaporation processes including the single-stage, bi-layer, and three-stage process were discussed. The characteristics of the co-evaporated CIGS solar cells were presented. Not only the surface morphologies but also the grading bandgap structures were crucial to the improvement of the open-circuit voltage of the CIGS solar cells. Efficiencies of over 17% for the co-evaporated CIGS solar cells have been achieved. Furthermore, the critical factors and the mechanisms governing the performance of the CIGS solar cells were addressed.

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Section: Characteristics Of Cigs Solar Cells Prepared By Various Depomentioning

confidence: 90%

Deposition Technologies of High-Efficiency CIGS Solar Cells: Development of Two-Step and Co-Evaporation Processes

et al. 2018

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“…8,9 Especially the grading parameters within the space charge region (towards the front) seem to be critical. 7,8,11 Thereby, the extension in depth of the space charge region in Cu(In,Ga)Se 2 absorbers lies in a depth range of a few hundred nanometers, 9,17 where under solar cell operation, most of the photoexcited carriers are generated. Table II shows the characteristic PV parameters of devices made from absorber layers that have been deposited in the same deposition runs as the samples for the depth profile analyses.…”

Section: Resultsmentioning

confidence: 99%

“…5,8 However, a compositional grading can also be unfavorable for the device performance, which holds in particular within the space charge region. 7,11 Therefore a detailed knowledge of the gallium depth profile is highly desirable. Recent studies by D. Abou-Ras et al 12 and C. L. Perkins 13 emphasize the necessity for comparative investigations of elemental depth profiles by different analytical tools to achieve reliable results.…”

Section: Introductionmentioning

confidence: 99%

Gallium gradients in chalcopyrite thin films: Depth profile analyses of films grown at different temperatures

Mönig

Kaufmann

Fischer

et al. 2011

Journal of Applied Physics

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Cu(In,Ga)Se 2 films are used as absorber layers in chalcopyrite thin film solar cells. As the gallium concentration in the absorber can be used to control the band gap, there have been many efforts to vary the gallium concentration in depth to gain an optimum balance of light absorption, carrier collection, and recombination at different depths of the absorber film, leading to improved quantum efficiency. In this study, we investigate the effect of the maximum substrate temperature during film growth on the depth dependent gallium concentration. For the in-depth gallium concentration analyses, we use two techniques, covering complementary depth ranges. Angle dependent soft x-ray emission spectroscopy provides access to information depths between 20 and 470 nm, which covers the depth range of the space charge region, where most of the photoexcited carriers are generated. Therefore, this depth range is of particular interest. To complement this investigation we use secondary neutral mass spectrometry, which destructively probes the whole thickness of the absorber (%2 lm). The two methods show increasingly pronounced gallium and indium gradients with decreasing maximum substrate temperature. The probing of the complementary depth ranges of the absorbers gives a consistent picture of the in-depth gallium distribution, which provides a solid basis for a comprehensive discussion about the effect of a reduced substrate temperature on the formation of gallium gradients in Cu(In,Ga)Se 2 and the device performance of the corresponding reference solar cells.

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“…The model implemented for interface transport in SCAPS is thermionic emission. The thermal velocity of the interface transport equals the smallest thermal velocity of the two neighboring layers [11]. For the defect, we use the same definition for interface defects and bulk defects.…”

Section: Numerical Modelingmentioning

confidence: 99%

Numerical Simulation And Performance Optimization Of Cu(In,Ga)Se2 Solar Cells

Oladapo¹,

Soucase²,

Aka³

2016

IOSR

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Band-gap engineering in CdS/Cu(In,Ga)Se2 solar cells

Abstract: Articles you may be interested inFabrication and characterization of Cu(InGa)Se 2 solar cells with absorber bandgap from 1.0 to 1.5 eV AIP Conf.

Cited by 84 publications

References 6 publications

Deposition Technologies of High-Efficiency CIGS Solar Cells: Development of Two-Step and Co-Evaporation Processes

Deposition Technologies of High-Efficiency CIGS Solar Cells: Development of Two-Step and Co-Evaporation Processes

Gallium gradients in chalcopyrite thin films: Depth profile analyses of films grown at different temperatures

Numerical Simulation And Performance Optimization Of Cu(In,Ga)Se2 Solar Cells

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