Approximation of the carrier generation rate in illuminated silicon

Furlan, J.; Amon, S.

doi:10.1016/0038-1101(85)90048-6

Cited by 63 publications

(34 citation statements)

References 4 publications

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“…kl is the damage coefficient intensity.  G (x) is the excess minority carrier generation rate [23] [24], given by:…”

Section: ( )mentioning

confidence: 99%

Base Thickness Optimization of a (n+-p-p+) Silicon Solar Cell in Static Mode under Irradiation of Charged Particles

Ba¹,

Thiam²,

Thiame³

et al. 2019

JEMAA

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In this work, we propose a method to determinate the optimum thickness of a monofacial silicon solar cell under irradiation. The expressions of back surface recombination velocity depending the damage coefficient (kl) and irradiation energy (p φ) are established. From their plots, base optimum thickness is deduced from the intercept points of the curves. The short-circuit currents Jsc0 and Jsc1 corresponding to the recombination velocity Sb0 and Sb1 are determinated and a correlation between the irradiation energy, the damage coefficient and optimum thickness of the base is established.

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“…kl is the damage coefficient intensity.  G (x) is the excess minority carrier generation rate [23] [24], given by:…”

Section: ( )mentioning

confidence: 99%

Base Thickness Optimization of a (n+-p-p+) Silicon Solar Cell in Static Mode under Irradiation of Charged Particles

Ba¹,

Thiam²,

Thiame³

et al. 2019

JEMAA

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“…, , x p kl δ φ generated at point of abscissa x in the base, according to the law is defined by equation (Equation (1)), describing the generation rate [12] [13] and expressed as:…”

Section: Theorymentioning

confidence: 99%

Electrical Parameters Determination from Base Thickness Optimization in a Silicon Solar Cell under Influence of the Irradiation Energy Flow of Charged Particles

Sow¹,

Ba²,

Moujtaba³

et al. 2020

EPE

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“…the density of photogenerated carriers in the base, is produced by the generation rate, expressed by [29]:…”

Section: T B D T Bmentioning

confidence: 99%

Influence of Both Magnetic Field and Temperature on Silicon Solar Cell Base Optimum Thickness Determination

Mohamed¹,

Sow²,

Gueye³

et al. 2019

JMP

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Approximation of the carrier generation rate in illuminated silicon

Cited by 63 publications

References 4 publications

Base Thickness Optimization of a (n+-p-p+) Silicon Solar Cell in Static Mode under Irradiation of Charged Particles

Base Thickness Optimization of a (n+-p-p+) Silicon Solar Cell in Static Mode under Irradiation of Charged Particles

Electrical Parameters Determination from Base Thickness Optimization in a Silicon Solar Cell under Influence of the Irradiation Energy Flow of Charged Particles

Influence of Both Magnetic Field and Temperature on Silicon Solar Cell Base Optimum Thickness Determination

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