Base Thickness Optimization of a (n+-p-p+) Silicon Solar Cell in Static Mode under Irradiation of Charged Particles

Abstract

In this work, we propose a method to determinate the optimum thickness of a monofacial silicon solar cell under irradiation. The expressions of back surface recombination velocity depending the damage coefficient (kl) and irradiation energy (p φ) are established. From their plots, base optimum thickness is deduced from the intercept points of the curves. The short-circuit currents Jsc0 and Jsc1 corresponding to the recombination velocity Sb0 and Sb1 are determinated and a correlation between the irradiation energy, the damage coefficient and optimum thickness of the base is established.

Influence of Both Magnetic Field and Temperature on Silicon Solar Cell Base Optimum Thickness Determination

“…Thus the results we propose in this work, constitute a contribution for the modelling and manufacturing of the solar cell thickness, for optimum efficiency under specific operating conditions [36].…”

“…The current-voltage characteristics, under constant illumination of the solar cell having different base thicknesses, are simulated and the efficiency is obtained according to the thickness and under the influence of the surface recombination velocity [31]. The influence of thickness is highlighted in dynamic regime [16] [30] [32] through the constant decay time, as well as in studies of the solar cell in 3D model [24] [33] [34] where the electrical (D, Sf, Sb) [35] [36] and geometry (grain size) [37] parameters are involved.…”

Shunt Resistance Determination in a Silicon Solar Cell: Effect of Flow Irradiation Energy and Base Thickness

“…It represents the recombination rate at the rear face influenced by the effect of the absorption of the light in the material through the coefficients (b i ) and leads to a generation rate, for L H . Figure 3 represents the profile of the two expressions of the recombination velocity at the rear face Sb0 and Sb1 as function of the base thickness [46].…”

“…In this work, we determine the shunt resistance, of a n + -p-p + silicon solar cell, whose base has undergone irradiation of charged particles [42] [43]. Its thickness [44] [45] is taken into account and optimized through the study of the theoretical expression of excess minority carrier recombination velocity in the rear face [46]. Then, using the concept of recombination velocity at the junction initiating the short circuit of the solar cell [47] [48] under steady state, we determine the shunt resistance, for each thickness imposed by the intensity of the irradiation flow of charged particles.…”

“…represents the profiles of the photocurrent density as a function of the recombination velocity at the junction for different values of the irradiation energy and the optimum base thickness[46].…”