An In-Depth Optimization of Thickness of Base and Emitter of ZnO/Si Heterojunction-Based Crystalline Silicon Solar Cell: A Simulation Method

Naim, Houcine; Shah, Deb Kumar; Abed, Bouadi; Siddiqui, Masoom Raza; Akhtar, M. Shaheer; Kim, Chong Yeal

doi:10.1007/s11664-021-09341-5

Cited by 12 publications

(3 citation statements)

References 49 publications

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“…For each input parameter in the batch mode, the range, the number of different values, and the kind of variations (logarithmic or linear) must all be specified [31][32][33]. This software contains several library files for semiconductor materials, such as AlGaAs, a-Si, c-Si, Ge, GaAs, GIN, and InP, to name a few [34,35]. This simulation software was used to examine the optoelectrical properties of solar cells using important parameters such as semiconductor bandgap, device area, reflectance value, device thickness, dielectric constant, carrier density, etc.…”

Section: Pc1d Simulating Toolmentioning

confidence: 99%

Influence of Efficient Thickness of Antireflection Coating Layer of HfO2 for Crystalline Silicon Solar Cell

Shah

KC²,

Umar

et al. 2022

Inorganics

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Anti-reflective coating (ARC) layers on silicon (Si) solar cells usually play a vital role in the amount of light absorbed into the cell and protect the device from environmental degradation. This paper reports on the thickness optimization of hafnium oxide (HfO2) as an ARC layer for high-performance Si solar cells with PC1D simulation analysis. The deposition of the HfO2 ARC layer on Si cells was carried out with a low-cost sol-gel process followed by spin coating. The thickness of the ARC layer was controlled by varying the spinning speed. The HfO2 ARC with a thickness of 70 nm possessed the lowest average reflectance of 6.33% by covering wavelengths ranging from 400–1000 nm. The different thicknesses of HfO2 ARC layers were used as input parameters in a simulation study to explore the photovoltaic characteristics of Si solar cells. The simulation findings showed that, at 70 nm thickness, Si solar cells had an exceptional external quantum efficiency (EQE) of 98% and a maximum power conversion efficiency (PCE) of 21.15%. The thicknesses of HfO2 ARC considerably impacted the photovoltaic (PV) characteristics of Si solar cells, leading to achieving high-performance solar cells.

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Section: Pc1d Simulating Toolmentioning

confidence: 99%

Influence of Efficient Thickness of Antireflection Coating Layer of HfO2 for Crystalline Silicon Solar Cell

Shah

KC²,

Umar

et al. 2022

Inorganics

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“…In this present work, undoped and Nickel doped zinc oxide (ZnO) thin films have been prepared on glass substrates by spin coating technique. We have investigated the influence of doping concentrations ranging from 0 to 6 at.-% on structural, morphological and optical properties of ZnO thin films [13].…”

Section: Introductionmentioning

confidence: 99%

Enhancing the efficiency of the gallium indium nitride (InGaN) solar cell by optimizing the effective parameters

Abed¹,

Naim²,

Djelloul³

et al. 2022

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The present work aims to improve the power and the conversion efficiency of solar cells, using the PC1D simulator, to study the performances of the solar cells based on (InGaN). The paper focuses first on optimization of the technological and geometrical parameters such as doping and the thickness of the layers to investigate their influence on the conversion efficiency of these structures. Then, the paper evaluates the efficiency η for the solar cell with and without Anti-reflection coating ARC on textured surfaces to achieve a final increase of 22.5% of conversion efficiency compared to InGaN standard solar cells.

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“…With the gradual decline of nonrenewable energy sources such as petroleum, coal, and natural gas, clean or renewable energy, has emerged as humanity's inevitable savior [1][2][3] . Solar energy is an excellent option for green and sustainable resources that will facilitate resolving the enormous problems of the energy crisis and environmental concerns 4 .…”

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confidence: 99%

Numerical assessment of optoelectrical properties of ZnSe–CdSe solar cell-based with ZnO antireflection coating layer

Parajuli¹,

KC²,

Khattri³

et al. 2023

Sci Rep

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In this work, a numerical assessment of the optoelectrical properties of the ZnO–ZnSe–CdSe heterojunction for a thin and cost-effective solar cell was made by using the PC1D simulation software. The photovoltaic (PV) properties have been optimized by varying thicknesses of the absorber layer of the p-CdSe layer, the window layer of n-ZnSe, and the antireflection coating (ARC) layer of ZnO, a transparent conductive oxide with enhanced light trapping, and wide bandgap engineering. There is a positive conduction band offset (CBO) of ΔEc = 0.25 eV and a negative valence band offset (VBO) of ΔEv = 1.2 − 2.16 = − 0.96 eV. The positive CBO prevents the flow of electrons from the CdSe to the ZnSe layer. Further, the impact of doping concentration on the performance of solar cells has been analyzed. The simulation results reveal the increase in the efficiency of solar cells by adding an ARC. The rapid and sharp increase in the efficiency with the thickness of the window layer beyond 80 nm is interesting, unusual, and unconventional due to the combined effect of morphology and electronics on a macro-to-micro scale. The thin-film solar cell with the structure of ZnO/ZnSe/CdSe exhibited a high efficiency of 11.98% with short-circuit current (Isc) = 1.72 A, open-circuit voltage (Voc) = 0.81 V and fill factor (FF) = 90.8% at an optimized thickness of 2 μm absorber layer, 50 nm window layer, and 78 nm ARC layer. The EQE of solar cells has been observed at about 90% at a particular wavelength at 470 nm (visible light range). Around 12% of efficiency from such a thin-layered solar cell is highly applicable.

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An In-Depth Optimization of Thickness of Base and Emitter of ZnO/Si Heterojunction-Based Crystalline Silicon Solar Cell: A Simulation Method

Cited by 12 publications

References 49 publications

Influence of Efficient Thickness of Antireflection Coating Layer of HfO2 for Crystalline Silicon Solar Cell

Influence of Efficient Thickness of Antireflection Coating Layer of HfO2 for Crystalline Silicon Solar Cell

Enhancing the efficiency of the gallium indium nitride (InGaN) solar cell by optimizing the effective parameters

Numerical assessment of optoelectrical properties of ZnSe–CdSe solar cell-based with ZnO antireflection coating layer

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