Enhancing the efficiency of the gallium indium nitride (InGaN) solar cell by optimizing the effective parameters

Abed, Bouadi; Naim, Houcine; Djelloul, A.; Benkrima, Y.; Fares, R.

doi:10.15251/cl.2022.199.611

Cited by 2 publications

(1 citation statement)

References 19 publications

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“…for GaAs, Ge, GIN, InP, c-Si, a-Si, and AlGaAs based devices are available in PC1D, which enables simulation of various semiconductor device properties [18]. In order to minimise costs while maximising device efficiency, careful selection of materials with the ideal thickness and doping levels is crucial [19]. The advantages of reduced parasitic absorption from the wide gap between the GaN layers must be fully realized in order to develop effective doping techniques [20].…”

Section: Introductionmentioning

confidence: 99%

Untitled

2023

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In this study, we used the PC1D simulator to demonstrate the performance analysis of a solar cell model based on gallium nitride (GaN). It has been discovered that when the layer thickness of the GaN substrate grows, the efficiency of solar cells decreases. This was found by comparing the doping concentration and layer thickness on the GaN and silicon substrates. As the thickness of the p-doping Si layer rises, cell efficiency increases just modestly. The optimal doping concentrations for GaN and p-silicon are 1x10 18 cm -3 and 1x10 17 cm -3 , respectively. In compared to other designs, GaN/p-silicon solar cells have the highest efficiency of 25.26%.

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Section: Introductionmentioning

confidence: 99%

Untitled

2023

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The effects of thickness and doping concentration on the solar efficiency of GaN/p-Si based solar cells

Khairuddin,

Mohd Yusoff,

Hussin

2023

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In this study, we used the PC1D simulator to demonstrate the performance analysis of a solar cell model based on gallium nitride (GaN). It has been discovered that when the layer thickness of the GaN substrate grows, the efficiency of solar cells decreases. This was found by comparing the doping concentration and layer thickness on the GaN and silicon substrates. As the thickness of the p-doping Si layer rises, cell efficiency increases just modestly. The optimal doping concentrations for GaN and p-silicon are 1x1018 cm-3 and 1x1017 cm-3 , respectively. In compared to other designs, GaN/p-silicon solar cells have the highest efficiency of 25.26%.

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Enhancing the efficiency of the gallium indium nitride (InGaN) solar cell by optimizing the effective parameters

Cited by 2 publications

References 19 publications

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The effects of thickness and doping concentration on the solar efficiency of GaN/p-Si based solar cells

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