Charge carrier transport in n–i–p and p–i–n a-Si/c-Si heterojunction solar cells

Hecke algebraic properties of dynamical R -matrices. Application to related quantum matrix algebras

“…Such A(R(p),R ′ (p ′ )) can be treated in much the same way or reduced to the study of two matrix algebras of the above type setting Q i j = a i α a α j , where a and a satisfy exchange relations of the type (0.6) and (0.10), respectively (see [24]). Note that dynamical quantum groups (introduced in [16]) are defined by relations similar to (5.3) and (5.4) but with the dynamical R-matrices (and momenta p, p ′ ) related to each other by some equivalence transformation R ′ (p ′ ) = X −1R (p)X.…”

“…As an application of quantum matrix algebras we briefly describe here a typical problem of the two dimensional conformal field theory in which such matrices arise (see [24] for more details). Let G be a connected compact Lie group and g = g(t, x) be a map from the cylinder R × S 1 into G which satisfies the Wess-Zumino-Novikov-Witten (WZNW) equations of motion.…”

“…(5.19)). An important consequence of (6.7) and (6.8) is the existence of an ideal I h of A generated by n 2 elements (a i α ) h such that the factor algebra A/I h is finite dimensional [24] . This allows to define a finite dimensional "Fock space representation" of A with a unique vacuum vector |vac > corresponding to trivial su(n) weight λ i = 0 (p ii+1 = 1 , i = 1, .…”

“…Here we show that a special solution of the QDYBE (0.3) yields a new matrix representation of the Hecke algebra. We concentrate on a general study of the Hecke algebra properties of this solution and the ensuing properties of the quantum matrices satisfying (0.6) relegating applications to the WZNW model to a subsequent publication [24] which is highlighted in Section 6. A central result is the computation of the quantum determinant of a and the (based on it) evaluation of the inverse quantum matrix.…”

Fabrication of hydrogenated amorphous Si/crystalline Si1−xGex(x≤ 0.84) heterojunction solar cells grown by solid source molecular beam epitaxy

“…7,8) For single-junction cells using single-crystalline Si 1¹x Ge x films, one design is that of a heterojunction-emitter-based solar cell in which a large-bandgap hydrogenated amorphous Si (a-Si:H) emitter is used. 9,10) Although an n-type substrate is commonly used as the absorber (to form a so-called p-i-n structure, where i is the intrinsic layer) for the heterojunction with intrinsic thin layer (HIT) cells, 11,12) we have concentrated instead on developing Si 1¹x Ge x heterojunction cells on p-type Si substrates (forming n-i-p structures) for two reasons. First, a low processing temperature of less than 200 °C for the deposition of a-Si:H can be adopted to prevent the unexpected lifetime degradation of Si 1¹x Ge x films during the construction of the solar cell.…”