Effects of abrupt and graded a-Si:C:H/a-Si:H interface on internal properties and external characteristics of p-i-n a-Si:H solar cells

Abstract

A novel structure, high conversion efficiency pSiC/graded pSiC/iSi/nSi/metal substratetype amorphous silicon solar cell J. Appl. Phys. 56, 538 (1984); 10.1063/1.333943 Influence of thin metal as a top electrode on the characteristics of PIN a Si:H solar cellsUsing a computer simulation, the effects of abrupt and graded a-Si:C:H/u-Si:H interfaces on the performance of a-Si:H p-i-n solar cells are discussed. It is shown that structures with graded heterojunction transitions possess much lower recombination near the junction and a higher accelerating built-in electric field in the i layer, both of which increase the open-circuit voltage and improve the solar cell fill factor. 5964

Hump-shaped internal collection efficiency of degraded a-Si:H p-i-n solar cells

“…A graded p-i heterojunction has successfully been modeled by a Gaussian-profiled tenfold increase of defect states throughout the 10-nm-thick buffer layer. 12 In the degradation process, changes at the p-i interface are therefore expected to decisively affect the cell performance. To examine to what extent the metastable defect states at the p-i interface affect the degradation of the ICE characteristics, we have chosen four cases.…”

“…12 The aim was to reveal under what conditions the hump-shaped voltage dependence occurs and to establish the physical origins for it. The possibility of exploiting this effect for the examination of internal behavior in degraded p-i-n a-Si:H solar cells is indicated.…”

Effect of radio frequency bias on the optical and structural properties of nanocrystalline SiC films deposited by helicon wave plasma enhanced chemical vapor deposition

“…Such a configuration is used in bipolar transistors, solar cells, photodiodes, and phototransistors. [3,4] In addition, due to the capability of the nanocrystalline silicon carbide to emit light in the full visible wavelength range, it is also an especially promising material for a large area color display devices. Many techniques have been applied the preparation of SiC films [5][6][7][8] .…”

Hydrogenated nanocrystalline silicon carbide: fabrication, properties and heterostructure device application

“…These unfavorable conditions imply the use of silicon compatible wide bandgap semiconductor, and in particular silicon carbide. Many efforts have been devoted recently to the growth of crystalline SiC (c-SiC) on Si for the development of heterojunction devices such as bipolar transistors [1], solar cells [2], photodetectors [3] and electroluminescent components [4]. However, the high temperature processing required so far for the growth of SiC would generate high density of defects at the SiC/Si interface, owing mainly to the 20% lattice mismatch.…”