Hydrogenated nanocrystalline silicon carbide: fabrication, properties and heterostructure device application

Abstract

International audienceSilicon carbide thin layers have been obtained by reactive magnetron sputtering in a hydrogen-rich plasma at substrate temperatures, Ts, varying between 200°C and 600°C. The analysis of the infrared absorption spectra reveal an abrupt transition from amorphous phase to a crystalline fraction fc exceeding 30% when Ts is increased to 300°C. The fc value continues to increase for higher values of Ts. The evolutions of the optical parameters deduced from the modeling of the spectroscopic ellipsometry spectra are quite consistent with the observed structural change. The increase of the refractive index reflects the improvement of both crystallinity and compactness of the layers, while the crystallized SiC samples appear more absorbent than monocrystalline SiC. The heterojunction diodes fabricated from the deposition of our layers on c-Si wafers have shown good rectifying behavior, as well as a low leakage current

The effect of neutron irradiation on the properties of SiC and SiC(N) layer prepared by plasma enhanced chemical vapor deposition

“…The best efficiency of 18.5% (independently confirmed) was realised with a single layer a-SiC:H(N) emitter with a thickness of 11 nm [3]. PECVD technique offers an attractive opportunity to fabricate amorphous hydrogenated SiC and N-doped SiC layers at intermediate substrate temperatures and it provides high quality layers with good adhesion, good coverage of complicated substrate shapes and high deposition rate [4,5]. The a-SiC:H thin layers deposited by PECVD as protective coatings for harsh environment applications were investigated [6].…”

Neutron-irradiation effect on the electrical characteristics of amorphous silicon carbide and nitrogen-doped silicon carbide films prepared by PECVD technology

“…The best efficiency of 18.5% (independently confirmed) was realized with a single layer a-SiC:H(n) emitter with a thickness of 11 nm [1]. The plasma-enhanced chemical vapor deposition (PECVD) technique offers an attractive opportunity to fabricate amorphous hydrogenated N-doped SiC films at intermediate substrate temperatures and it provides high-quality films with good adhesion, good coverage of complicated substrate shapes and high deposition rate [2,3]. The a-SiC:H thin films deposited by PECVD as protective coatings for harsh-environment applications were investigated [4].…”