The effect of neutron irradiation on the properties of SiC and SiC(N) layer prepared by plasma enhanced chemical vapor deposition

Huran, J.; Valovič, A.; Boháček, P.; Швецов, В. Н.; Kobzev, A.P.; Борзаков, С. Б.; Kleinová, Angela; Sekacova, M.; Arbet, J.; Sasinková, Vlasta

doi:10.1016/j.apsusc.2012.10.162

Cited by 12 publications

(6 citation statements)

References 16 publications

Supporting

Mentioning

Contrasting

Order By: Relevance

“…The wide (940 cm -1 to 990 cm -1 ) peak can be related to the second-order transversal optical phonons as observed in bulk crystalline silicon. 34 SiC crystallites also show a wide peak at this wavenumber 35 , but in that case, a first order peak would also have been present at 790 cm -1 This conflicts with the finding in Figure 5b, because carbon in form of alloys or allotropes must be present in the specimen. To resolve this, we examine the TEM diffraction patterns in Figures 2 and 4, where they were not indexed for legibility.…”

Section: Please Do Not Adjust Marginsmentioning

confidence: 58%

“…The wide (940 cm −1 to 990 cm −1 ) peak can be related to the second-order transversal optical phonons as observed in bulk crystalline silicon. 34 SiC crystallites also show a wide peak at this wavenumber, 35 but in this case, a first order peak would have also been present at 790 cm −1 . This conflicts with the finding in Fig.…”

Section: Current and Temperature Effectsmentioning

confidence: 89%

See 1 more Smart Citation

In situ degradation studies of two-dimensional WSe₂–graphene heterostructures

et al. 2015

View full text Add to dashboard Cite

Heterostructures of two-dimensional materials can be vulnerable to thermal degradation due to structural and interfacial defects as well as thermal expansion mismatch, yet a systematic study does not exist in the literature. In this study, we investigate the degradation of freestanding WSe2-graphene heterostructures due to heat and charge flow by performing in situ experiments inside a transmission electron microscope. Experimental results show that purely thermal loading requires higher temperatures (>850 °C), about 150 °C higher than that under combined electrical and thermal loading. In both cases, selenium is the first element to decompose and migration of silicon atoms from the test structure to the freestanding specimen initiates rapid degradation through the formation of tungsten disilicide and silicon carbide. The role of the current flow is to enhance the migration of silicon from the sample holder and to knock-out the selenium atoms. The findings of this study provide fundamental insights into the degradation of WSe2-graphene heterostructures and inspire their application in electronics for use in harsh environments.

show abstract

Section: Please Do Not Adjust Marginsmentioning

confidence: 58%

Section: Current and Temperature Effectsmentioning

confidence: 89%

In situ degradation studies of two-dimensional WSe₂–graphene heterostructures

et al. 2015

View full text Add to dashboard Cite

show abstract

“…For the S 0 sample, the absorption peak at 530 cm −1 is attributed to the lattice vibration of partially carbonized Si atoms, while the peak at 580 cm −1 is due to the Si-O bond bending vibration of SiC hydrolysis or surface defect positions. [33][34] Furthermore, these peaks at 530 and 580 cm −1 can also be attributed to the Fe-O bond and the carboxyl symmetric/asymmetric stretching vibration signal in Fe-MOF. 35 Therefore, the peaks of S 1 sample at 530 and 580 cm −1 are more intense than that of S 0 due to the introduction of MIL-101(Fe).…”

Section: Resultsmentioning

confidence: 94%

Fe₃O₄/C@SiC nanocomposite microwave absorbing material derived from MIL‐101(Fe)@SiC

Wei,

Wang,

Rehman

et al. 2023

J Am Ceram Soc.

View full text Add to dashboard Cite

The Fe3O4/C@SiC nanocomposites were synthesized by pyrolyzing MIL‐101(Fe)@SiC nanocomposites under Ar gas atmosphere. The magnetic Fe3O4 enhances the magnetic loss of the composite material, while the abundant defects and voids on the surface of MIL‐101(Fe)‐derived porous carbon form a network with SiC whiskers, extending the transmission path of electromagnetic waves. The synergistic effect of Fe3O4 and porous carbon optimizes the impedance matching of the material and improves its attenuation capability. As a result, the Fe3O4/C@SiC nanocomposite exhibits excellent microwave absorption performance. Fe3O4/C@SiC nanocomposites about minimal reflection loss (RLmin) of −80.11 dB at 5.93 GHz and an effective absorption bandwidth (RL −10 dB) of 3.57 GHz (4.33–7.90 GHz). The findings of this study shed light on the potential of SiC for microwave absorption applications.

show abstract

“…In this study, FTIR and XPS assays of the film (a) showed that the nitrogen containing SiC film was formed on the substrate surface when Ar + ions were injected in conjunction with HMDS. In previous papers, it was shown that nitrogen containing SiC films were available for thin overcoats for flexible media [ 40 ], materials with low dielectric constant [ 41 ], and materials of passivation layer [ 42 ].…”

Section: Discussionmentioning

confidence: 99%

Low-energy Ar+ and N+ ion beam induced chemical vapor deposition using hexamethyldisilazane for the formation of nitrogen containing SiC and carbon containing SiN films

et al. 2021

View full text Add to dashboard Cite

We proposed an experimental methodology for producing films on substrates with an ion beam induced chemical vapor deposition (IBICVD) method using hexamethyldisilazane (HMDS) as a source material. In this study, both HMDS and ion beam were simultaneously injected onto a Si substrate. We selected Ar+ and N+ as the ion beam. The energy of the ion beam was 101 eV. Temperature of the Si substrate was set at 540 °C. After the experiments, films were found to be deposited on the substrates. The films were then analyzed by Fourier transform infrared (FTIR) spectroscopy, stylus profilometer, X-ray diffraction, atomic force microscopy, and X-ray photoelectron spectroscopy (XPS). The FTIR and XPS results showed that silicon carbide films containing small amount of nitrogen were formed when Ar+ ions were injected in conjunction with HMDS. On the other hand, in the cases of N+ ion beam irradiation, silicon nitride films involving small amount of carbon were formed. It was noted that no film deposition was observed when HMDS alone was supplied to the substrates without any ion beam injections.

show abstract

The effect of neutron irradiation on the properties of SiC and SiC(N) layer prepared by plasma enhanced chemical vapor deposition

Cited by 12 publications

References 16 publications

In situ degradation studies of two-dimensional WSe₂–graphene heterostructures

In situ degradation studies of two-dimensional WSe₂–graphene heterostructures

Fe₃O₄/C@SiC nanocomposite microwave absorbing material derived from MIL‐101(Fe)@SiC

Low-energy Ar+ and N+ ion beam induced chemical vapor deposition using hexamethyldisilazane for the formation of nitrogen containing SiC and carbon containing SiN films

Contact Info

Product

Resources

About

The effect of neutron irradiation on the properties of SiC and SiC(N) layer prepared by plasma enhanced chemical vapor deposition

Cited by 12 publications

References 16 publications

In situ degradation studies of two-dimensional WSe2–graphene heterostructures

In situ degradation studies of two-dimensional WSe2–graphene heterostructures

Fe3O4/C@SiC nanocomposite microwave absorbing material derived from MIL‐101(Fe)@SiC

Low-energy Ar+ and N+ ion beam induced chemical vapor deposition using hexamethyldisilazane for the formation of nitrogen containing SiC and carbon containing SiN films

Contact Info

Product

Resources

About

In situ degradation studies of two-dimensional WSe₂–graphene heterostructures

In situ degradation studies of two-dimensional WSe₂–graphene heterostructures

Fe₃O₄/C@SiC nanocomposite microwave absorbing material derived from MIL‐101(Fe)@SiC