Examination of blocking current-voltage behaviour through defect chalcopyrite layer in ZnO/CdS/Cu(In,Ga)Se2/Mo solar cell

Topič, Marko; Smole, F.; Furlan, J.

doi:10.1016/s0927-0248(97)00058-5

Cited by 55 publications

(22 citation statements)

References 2 publications

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“…Some publications suggest n-type conductivity either caused by Cd diffusion 9,10 or the formation of an n-type defect compound with an enlarged bandgap energy. 11 Other publications suggest a pþ layer (high density of acceptortype defect states) 5 or a pþ layer and additional donor-type defect states at the pþ layer/CdS interface. 12 It was shown that a pþ layer can account for a kink for red and white light illumination.…”

Section: A P1 Layermentioning

confidence: 99%

“…5,8 Corresponding simulated EBIC profiles are shown in Figure 6(d). The agreement between the experimental and simulated data is good.…”

Section: Acceptors At Cds/zno Interface (If2 Model C)mentioning

confidence: 99%

“…Several models have been proposed, which are all based on the assumption of a high density of acceptor-type defect states. These are either located in the absorber layer close to the CIGSe/CdS interface (pþ layer), 1,4,5 within the CdS layer 2,3,6 or at the CdS/ZnO interface. 7,8 In all models, the defect states are mostly occupied by electrons for generation conditions that imply a low hole density in the heterojunction region (red light illumination, electron beam irradiation in the bulk of the absorber layer).…”

Section: Introductionmentioning

confidence: 99%

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Generation-dependent charge carrier transport in Cu(In,Ga)Se2/CdS/ZnO thin-film solar-cells

Nichterwitz

Caballero

Kaufmann

et al. 2013

Journal of Applied Physics

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Cross section electron-beam induced current (EBIC) and illumination-dependent current voltage (IV) measurements show that charge carrier transport in Cu(In,Ga)Se2 (CIGSe)/CdS/ZnO solar-cells is generation-dependent. We perform a detailed analysis of CIGSe solar cells with different CdS layer thicknesses and varying Ga-content in the absorber layer. In conjunction with numerical simulations, EBIC and IV data are used to develop a consistent model for charge and defect distributions with a focus on the heterojunction region. The best model to explain our experimental data is based on a p+ layer at the CIGSe/CdS interface leading to generation-dependent transport in EBIC at room temperature. Acceptor-type defect states at the CdS/ZnO interface cause a significant reduction of the photocurrent in the red-light illuminated IV characteristics at low temperatures (red kink effect). Shallow donor-type defect states at the p+ layer/CdS interface of some grains of the absorber layer are responsible for grain specific, i.e., spatially inhomogeneous, charge carrier transport observed in EBIC.

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Section: A P1 Layermentioning

confidence: 99%

“…5,8 Corresponding simulated EBIC profiles are shown in Figure 6(d). The agreement between the experimental and simulated data is good.…”

Section: Acceptors At Cds/zno Interface (If2 Model C)mentioning

confidence: 99%

Section: Introductionmentioning

confidence: 99%

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Generation-dependent charge carrier transport in Cu(In,Ga)Se2/CdS/ZnO thin-film solar-cells

Nichterwitz

Caballero

Kaufmann

et al. 2013

Journal of Applied Physics

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“…1 depicts the cell performance of CIGS solar cells irradiated with 100 keV electrons, and the CIGS solar cells show so-called rollover behavior in LIV characteristics at low temperature [11]. This effect is reportedly due to a second junction at the interface between a CIGS film and Mo back-contact electrodes in CIGS cells [15]. The rollover effect on LIV decreases with progressive irradiation up to a fluence of 1 × 10 16 cm −2 .…”

Section: Resultsmentioning

confidence: 99%

Degradation of Cu(In, Ga)Se 2 thin-film solar cells due to the ionization effect of low-energy electrons

et al. 2015

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“…the cross section through the stack (Galagan et al, 2012;Niemegeers et al, 1998;Topic et al, 1997;Burgelman and Minnaert, 2006). This can describe the output of a solar cell, but does not give any information on effects perpendicular to the cell stack, such as the enhanced influence of series resistance introduced by monolithic integration.…”

Section: Introductionmentioning

confidence: 99%

Optimized grid design for thin film solar panels

Deelen¹,

Klerk²,

Barink³

2014

Solar Energy

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Examination of blocking current-voltage behaviour through defect chalcopyrite layer in ZnO/CdS/Cu(In,Ga)Se2/Mo solar cell

Cited by 55 publications

References 2 publications

Generation-dependent charge carrier transport in Cu(In,Ga)Se2/CdS/ZnO thin-film solar-cells

Generation-dependent charge carrier transport in Cu(In,Ga)Se2/CdS/ZnO thin-film solar-cells

Degradation of Cu(In, Ga)Se 2 thin-film solar cells due to the ionization effect of low-energy electrons

Optimized grid design for thin film solar panels

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