Tunnelling generation–recombination currents in a-Si junctions

Furlan, J.

doi:10.1016/s0079-6727(01)00003-9

Cited by 19 publications

(16 citation statements)

References 39 publications

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“…7). The trapassisted tunneling carrier capture and emission has already been proposed to model the transport mechanism in a-Si p-n homojunctions, 27 and different approaches exist to model this mechanism. 28,29 Moreover, this mechanism allows also to explain the current transport in amorphous silicon n/p tunnel junctions present in tandem solar cells.…”

Section: à2mentioning

confidence: 99%

Carrier transport mechanism in the SnO2:F/p-type a-Si:H heterojunction

Cannella

Principato

Foti

et al. 2011

Journal of Applied Physics

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We characterize SnO 2 :F/p-type a-Si:H/Mo structures by current-voltage (I-V) and capacitance-voltage (C-V) measurements at different temperatures to determine the transport mechanism in the SnO 2 :F/ p-type a-Si:H heterojunction. The experimental I-V curves of these structures, almost symmetric around the origin, are ohmic for V j j< 0:1 V and have a super-linear behavior (power law) for V j j< 0:1 V. The structure can be modeled as two diodes back to back connected so that the main current transport mechanisms are due to the reverse current of the diodes. To explain the measured C-V curves, the capacitance of the heterostructure is modeled as the series connection of the depletion capacitances of the two back to back connected SnO 2 :F/p-type a-Si:H and Mo/p-type a-Si:H junctions. We simulated the reverse I-V curves of the SnO 2 :F/p-type a-Si:H heterojunction at different temperatures by using the simulation software SCAPS 2.9.03. In the model the main transport mechanism is generation of holes enhanced by tunneling by acceptor-type interface defects with a trap energy of 0.4 eV above the valence bandedge of the p-type a-Si:H layer and with a density of 4.0 Â 10 13 cm À2. By using I-V simulations and the proposed C-V model the built-in potential (V bi ) of the SnO 2 :F/p-type a-Si:H (0.16 V) and p-type a-Si:H/Mo (0.14 V) heterojunctions are extracted and a band diagram of the characterized structure is proposed.

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Section: à2mentioning

confidence: 99%

Carrier transport mechanism in the SnO2:F/p-type a-Si:H heterojunction

Cannella

Principato

Foti

et al. 2011

Journal of Applied Physics

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“…Meanwhile, the predominated transport in a-Si:H solar cells is governed by drift collection [36,37]. The internal electric field plays a vital role to enhance the drift current while restrain the diffusion current flow from p to n layer [38,39]. The regions with different electric fields can be considered as sub-cells that compose the whole solar cell in parallel or series configurations.…”

Section: Theory and Calculationmentioning

confidence: 99%

Coupled optical and electrical modeling of thin-film amorphous silicon solar cells based on nanodent plasmonic substrates

et al. 2014

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“…This process occurs when an electron tunnels to a trap in the band gap and is then thermally excited out of the trap. This can result in a temperature dependent subthreshold swing voltage as well as temperature dependent threshold shifts [24,[44][45][46]. It also increases the subthreshold swing voltage by preventing the tunneling from turning off.…”

Section: Other Design Issues To Avoidmentioning

confidence: 99%