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Abstmct-This paper t'eports on the l'esults of a highly efficient monolithically Cully-integrated SiGe Class E power amplifi er using; em"elope tnlcki:ng; techniques for EDGE applications. The Enyelope-traddng; (EI) system inclndes a discrete linear op-amp and a cOIlYerter. The RF Class E amplifi er was fabIicated in a O.18jJm BiCMOS SiGe technollJl!Y. The RF Class E power amplifier achieved a collector efficiency (CE) of 62.7% and the oyerall power added efficiency (P AE) of the ET system is 44.4% at lilt ouipnt power of 20.4dBm (01' an 881MHz EDGE modnlated signal A discrete euyelope switching amplifier achieved 82.8% t'ffi deucy while driving tht' Class E PA voltage snpply. The linearized SiGe PA passed the stringl'u! EDGE transmit spt'etrnm mask

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The linearization of highly efficient monolithic SiGe Class E power amplifiers (PAs) using both EnvelopeTracking (ET) and Envelope-Elimination-and-Restoration (EER) techniques has been studied at 900MHz. Without applying any linearization, the fully-integrated SiGe PAs achieve power-added efficiency (PAE) of 66% with no offchip matching. The overall PAE of an ET-linearized PA system is 45% at an output power of 20dBm for an 881MHz EDGE (Enhanced Data Rate for GSM Evolution) modulated signal. The ET-linearized PAs pass the stringent EDGE transmit spectrum mask, but the EER-linearized PAs do not. The PAE of the ET system is expected to reach~50% with further efficiency improvement on the envelope amplifier.