Highly Efficient Monolithic Class E SiGe Power Amplifier Design at 900 and 2400 MHz

Lie, Donald Y. C.; Lopez, Jerry; Popp, J.D.; Rowland, Jason; Wang, Guogong; Qin, Guoxuan; Ma, Zhenqiang

doi:10.1109/tcsi.2008.2010145

Cited by 24 publications

(6 citation statements)

References 37 publications

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“…This performance is comparable to state-of-the-art integrated CMOS switches [18]. Therefore, external SiGe BiCMOS PAs can be quite attractive for medium power PA applications [19,20]. In view of this level of performance and front-end integration it would seem to be too costly and slow to integrate the switchplexer and dual-band PA onto the 45 nm CMOS transceiver die.…”

Section: Benefits Of External Pa Versus Integrated Cmos Pamentioning

confidence: 99%

“RF-SoC”: Integration Trends of On-Chip CMOS Power Amplifier: Benefits of External PA versus Integrated PA for Portable Wireless Communications

Lie

2010

International Journal of Microwave Science and Technology

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RFIC integration has seen dramatic progress since the early 1990s. For example, Si-based single-chip products for GSM, WLAN, Bluetooth, and DECT applications have become commercially available. However, RF power amplifiers (PAs) and switches tend to remain off-chip in the context of single-chip CMOS/BiCMOS transceiver ICs for handset applications. More recently, several WLAN/Bluetooth vendors have successfully integrated less demanding PAs onto the transceivers. This paper will focus on single-chip RF-system-on-a-chip (i.e., “RF-SoC”) implementations that include a high-power PA. An analysis of all tradeoffs inherent to integrating higher power PAs is provided. The analysis includes the development cost, time-to-market, power efficiency, yield, reliability, and performance issues. Recent design trends on highly integrated CMOS WiFi transceivers in the literature will be briefly reviewed with emphasis on the RF-SoC product design tradeoffs impacted by the choice between integrated versus external PAs.

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Section: Benefits Of External Pa Versus Integrated Cmos Pamentioning

confidence: 99%

“RF-SoC”: Integration Trends of On-Chip CMOS Power Amplifier: Benefits of External PA versus Integrated PA for Portable Wireless Communications

Lie

2010

International Journal of Microwave Science and Technology

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“…[4] and X-band [5][6][7][8][9][10] with GaAs FETs. MMIC class-E PAs are demonstrated in GaAs [5,15], InP [6], GaN [9] and CMOS [11,16]. In [4], a FLK052WG class-E microstrip PA that delivers 0.61W with a compressed gain of 9.8 dB, a drain efficiency of 81%, and a PAE of 72% at 5GHz is integrated in a spatial combining array.…”

Section: Microwave Class-e Amplifiersmentioning

confidence: 99%

Microwave class-E power amplifiers

Popović

Garcia

2017

2017 IEEE MTT-S International Microwave Symposium (IMS)

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Abstract-This paper reviews circuit architectures and demonstrated class-E power amplifiers in the UHF and microwave frequency range. Scaling class-E soft-switching operation to high frequencies presents a number of challenges, particularly in the control of parasitic reactances of the device and the circuit. Different approaches have been taken, from using parasitics of lumped elements to provide the correct fundamental and harmonic impedances in the UHF range, to transmission-line implementations at frequencies above 10GHz.

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“…This has significant impact on the PA performance. The effect of the load variation on the class-E PA can be examined by an analytical approach [25] or using a load-pull technique [26].…”

Section: B Pvt Compensation Conceptmentioning

confidence: 99%

Process, Voltage and Temperature Compensation Technique for Cascode Modulated PAs

Sira

Larsen

2013

IEEE Trans. Circuits Syst. I

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This paper presents a process, voltage and temperature (PVT) compensation method for a cascode modulated polar power amplifier (PA). It is shown that it is possible to create a baseband replica circuit of the PA that has the same AM-AM nonlinearity as the PA itself. The replica circuit, that represents a transistor level model (empirical model) of the cascode modulated PA, is utilized in a PA analog predistorter. The analog predistorter linearizes and compensates for PVT variation of the cascode modulated PA. The empirical model is placed in the negative feedback of an operational transconductance amplifier. The predistorted varying envelope signal is applied to the cascode gate of the PA. It is shown that the proposed PVT compensation technique significantly reduces the PVT spread of the PA linearity indicators and improves the PA linearity. Simulations were performed in a 0.13 CMOS process.

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Highly Efficient Monolithic Class E SiGe Power Amplifier Design at 900 and 2400 MHz

Cited by 24 publications

References 37 publications

“RF-SoC”: Integration Trends of On-Chip CMOS Power Amplifier: Benefits of External PA versus Integrated PA for Portable Wireless Communications

“RF-SoC”: Integration Trends of On-Chip CMOS Power Amplifier: Benefits of External PA versus Integrated PA for Portable Wireless Communications

Microwave class-E power amplifiers

Process, Voltage and Temperature Compensation Technique for Cascode Modulated PAs

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