No abstract

No abstract

No abstract

An ion milling system was used to implant low energy ni'trogen into an Si surface. The material composition and Si-N bonding of the film after various annealing conditions were investigated using grazing angle backscattering and infrared transmission spectroscopy. The ratio of Si to N was about 1 in the as-implanted films. After thermal annealing, the film composition changed and approached that of a stoichiometric nitride. Oxidation resistance of the film in wet and dry ambients was studied. Examination of the LOCOS profile revealed a marked decrease in the lateral oxidation as compared to the conventional process. The film exhibited insulating characteristics after 4 hr annealing at 900~ in nitrogen. beam irradiation, Rutherford backscattering. ) unless CC License in place (see abstract). ecsdl.org/site/terms_use address. Redistribution subject to ECS terms of use (see 130.102.42.98 Downloaded on 2015-03-13 to IP Vol. 129, No. 2 NITROGEN IMPLANTATION INTO SILICON 409 ) unless CC License in place (see abstract). ecsdl.org/site/terms_use address. Redistribution subject to ECS terms of use (see 130.102.42.98 Downloaded on 2015-03-13 to IP

No abstract