Ionenimplantation

Substrate influence on the outdiffusion of antimony dopant in monocrystalline silicon

“…Since the annealing treatment of the implanted targets was performed under oxygen atmosphere, a layer of SiO 2 oxide has been formed on the samples surface. Hence, during the annealing, we suppose that antimony ions are forced to migrate to Si/SiO 2 interface because of the low diffusivity of Sb in Si [2,3] and the lower diffusivity of Sb in SiO 2 [9]. Consequently, after the etching (with HF) of the annealed samples, the SiO 2 layer is removed and an important quantity of antimony is lost.…”

Stoichiometric titanium dioxide ion implantation in AISI 304 stainless steel for corrosion protection

“…In addition the depth profile deviates substantially from a Gaussian-like profile. This might be caused by effects like sputtering, range shortening and recoil implantation [24,25]. Annealing of the sample leads to no significant diffusion of Ti + or O + , but to an increase of the passivation layer of stainless steel in form of iron oxides.…”

Study of the critical current and irreversibility line of Bi2Sr2CaCu2O8 thin films irradiated with low-energy Co+ and Fe+ ions

“…5 the scheme of the radiation defect formation is shown. According to the theoretical calculation [16] the distribution of the implanted ion density with depth x follows the Gaussian law and may be written as…”