Substrate influence on the outdiffusion of antimony dopant in monocrystalline silicon

Labbani, R.; Halimi, R.

doi:10.1016/j.mseb.2005.08.009

Cited by 5 publications

(6 citation statements)

References 9 publications

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“…nomenon is in agreement with our previous work which was performed in other conditions but with the same species (i.e. antimony) [6,13]. Using RBX code, the simulation of antimony signal of sample S2 has shown that the maximum of antimony concentration was situated at 613 Å below the surface compared with the projected range (R p ) of 641 Å (found by SRIM program).…”

Section: Resultssupporting

confidence: 89%

“…This is due to its high mass and low diffusivity in silicon [2][3][4]. However, it is reported that antimony atoms are generally out-diffused from silicon substrates at high temperature annealing [5,6]. The phenomenon of out-diffusion which is obviously accompanied by a loss in dopant dose, has been noticed for both 100 and 111 oriented silicon substrates.…”

Section: Introductionmentioning

confidence: 99%

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Experimental Characterization of Antimony Dopant in Silicon Substrate

2016

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Ion implantation is a method largely used to fabricate shallow junctions in the surface target. However, the ions are randomly redistributed and a huge damage is generated in the sample. Annealing treatments are thus necessary to restore defects and to activate the dopant. Among several elements, antimony is particularly attractive since it has low diffusivity in silicon which means that is suitable to obtain ultra shallow junctions. Moreover, antimony is attractive in many applications such as the fabrication of transistors and infrared detectors. In this work, the electrical activation of antimony is studied in case of silicon target.

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Section: Resultssupporting

confidence: 89%

Section: Introductionmentioning

confidence: 99%

Experimental Characterization of Antimony Dopant in Silicon Substrate

2016

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“…29 Annealing of Si(111) moreover causes a segregation of Sb atoms from the bulk on the surface. 30 Our spectrum supports the proposed interpretation since a pentavalent substitutional atom in the T 4 position should have a fully occupied dangling bond, which is manifested by the peak at −0.8 eV and zero density at the Fermi level. The presence of a fully occupied dangling bond causes a decrease of DOS of the neighboring Sn atoms and their darker appearance in STM.…”

Section: ■ Results and Discussionsupporting

confidence: 85%

Role of Dangling Bond State Occupancy in Adsorption of Copper Phthalocyanine on Si(111)-Sn-√3 × √3

et al. 2019

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Interaction of organic molecules with solid surfaces reflects the local electronic structure of nonequivalent surface sites. The Si(111)-Sn-√3 × √3 surface with intrinsic defects offers dangling bonds with various electron occupancies. In this study, we report on the interaction of copper phthalocyanine with this surface studied with scanning tunneling microscopy and spectroscopy. Sn atoms in the adlayer contain unpaired electrons in their dangling bonds. The molecules are found to adsorb on Sb and Si substitutional defects instead of the homogenous Sn areas. The symmetry of the molecules is lowered or lost after adsorption, and we find substantial differences in the electronic structure of the molecules adsorbed on either type of defects. Furthermore, the molecules preferentially adsorb on double Si substitutional defects where they can switch between a static and a fuzzy state, for both of which a corresponding bonding model is proposed. Our study shows a pivotal role of substitutional defects in the reactivity of the Si(111)-Sn-√3 × √3 surface for the copper phthalocyanine molecules, which we attribute to local changes of electronic structure and discuss it in terms of dangling bond state occupancy.

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“…The reason for the different results between this work and the previous study is attributed to the considerable loss of Sb originating from a severe Sb outdiffusion in the (Si 0.8 Ge 0.2 ) 0.72 Sb 0.28 and (Si 0.8 Ge 0.2 ) 0.65 Sb 0.35 layers at the annealing temperature of 525°C. Sb is well known to migrate from a silicon matrix to the surface during thermal treatments [12]. In addition, it is highly probable that the outdiffused Sb atoms become vaporized at the annealing temperature close to the melting point of Sb (631°C) in vacuum.…”

Section: Discussionmentioning

confidence: 99%