In this research TiO 2 , SnO 2 and TiO 2 :SnO 2 nanocomposite thin films were fabricated by the sol-gel dip coating technique. The mixture was prepared by varying the molar ratio of SnO 2 to TiO 2 , i.e. TiO 2 :SnO 2 (9:1), TiO 2 :SnO 2 (8:2) and TiO 2 :SnO 2 (6:4)). The obtained samples were characterized by means of the Raman microscopy, Scanning Electron Microscopy (SEM), UV-Vis spectrophotometry and m-lines spectroscopy (Prism coupler). Raman analysis shows that pure TiO 2 and SnO 2 thin films are characterized by the vibrational modes of anatase and rutile cassiterite, respectively. Furthermore, the Raman spectra of the TiO 2 :SnO 2 nanocomposites show the presence of a mixture of anatase and rutile TiO 2 phases. The SEM images reveal that the morphology is clearly modified with SnO 2 content. The ripples in the transmittance spectra decreased with increasing SnO 2 content. Also, the evolution of the optical band gap seems to be consistent with the Raman analysis. A great attention has been paid to the refractive index measurements by the prism coupler technique. In this way, variable-refractive index systems have been successfully obtained using TiO 2 :SnO 2 nanocomposite thin films.
Ion implantation is a method largely used to fabricate shallow junctions in the surface target. However, the ions are randomly redistributed and a huge damage is generated in the sample. Annealing treatments are thus necessary to restore defects and to activate the dopant. Among several elements, antimony is particularly attractive since it has low diffusivity in silicon which means that is suitable to obtain ultra shallow junctions. Moreover, antimony is attractive in many applications such as the fabrication of transistors and infrared detectors. In this work, the electrical activation of antimony is studied in case of silicon target.
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