Low Energy Nitrogen Implantation into Silicon: Its Material Composition, Oxidation Resistance, and Electrical Characteristics

Chiu, T.-Y.; Bernt, H.; Ruge, Ingolf

doi:10.1149/1.2123869

Cited by 26 publications

(7 citation statements)

References 14 publications

(31 reference statements)

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“…For implantation energies of 1.9-2.1 keV, the resulting silicon nitride film thickness may be estimated at approximately 12 nm. This value is comparable to values reported by Chiu et al (11). Ellipsometric measurements of as-implanted films yielded parameter values of 9 = 15.4 and h = 151.…”

Section: Ion Beam Nitridationsupporting

confidence: 89%

Device Processing Aspects of Ion Beam Nitridation

Troxell

Moss

1984

J. Electrochem. Soc.

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Silicon nitride local oxidation masking layers fabricated by low energy nitrogenion implantation into silicon have been employed in the fabrication of n-channel silicon-gate MOSFET's. Processing considerations which are unique to the application of these very thin (10 nm) silicon nitride films are detailed. The effects of oxygen contamination during implantation are described, as are those of subsequent wafer processing steps such as RCA cleaning and oxygen plasma photoresist stripping. It is also shown that resputtered material from the wafer holder can result in iron contamination of the resulting silicon nitride films. Finally, we show that careful attention to these possible problems can produce transistors with reasonable current-voltage characteristics, as compared to conventionally processed devices.) unless CC License in place (see abstract). ecsdl.org/site/terms_use address. Redistribution subject to ECS terms of use (see 138.251.14.35 Downloaded on 2015-03-17 to IP

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Section: Ion Beam Nitridationsupporting

confidence: 89%

Device Processing Aspects of Ion Beam Nitridation

Troxell

Moss

1984

J. Electrochem. Soc.

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“…It may be explained by the formation of N 2 -molecules when Si-N bonds were oxidized according to Si 3 N 4 þ 3O 2 ! 3SiO 2 þ 2N 2 [27]. However, n-RBS (nonRutherford backscattering spectrometry) measurement with 3.05 MeV 4 He particles at backscattering angle of 171 (enhanced scattering cross section for 16 O) [24] as well as the FTIR spectra in Fig.…”

Section: Resultsmentioning

confidence: 99%

Ion Beam Synthesis and Characterization of Crystalline Si3N4 Surface Layers

Theodossiu

Baumann

Matz

et al. 2002

phys. stat. sol. (a)

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A thin Si3N4 surface layer is formed by implantation of 60 keV 15N nitrogen ions into single‐crystalline silicon 〈100〉 with a fluence of 5.6 × 1017 ions/cm2 and subsequent annealing (1295 °C, 15 min) under high vacuum conditions. The 15N depth distribution is measured with the resonant nuclear reaction 15N(p, αγ)12C. The formation of Si‐N bonds is proven by Fourier transform infrared spectroscopy using samples implanted with 14N ions and 15N ions, respectively. The crystallinity of the Si3N4 surface layer is studied by X‐ray diffraction and transmission electron microscopy. The annealing process leads to the formation of a polycrystalline α‐Si3N4 surface layer with a thickness of 90 nm. The analysis of high resolution TEM micrographs shows that the layer is split into two sublayers both consisting of single α‐Si3N4 crystals with lateral extension up to 500 nm.

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“…The degree of cleanliness of semiconductor surfaces is of the utmost importance during semiconductor device fabrication and has a pronounced influence on the characteristics and performance of these devices (1,2). For GaAs, it was reported that the composition of the surface and the contaminants thereon could be related to the properties of Schottky barrier and ohmic contact devices formed on it (3,4). Also, poor device characteristics in the case of InSb have been ascribed to nonstoichiometric surfaces caused by certain cleaning procedures prior to the metallization step (5).…”

Section: These Studies Indicate T H a T A Stabilization Of C H E M I ...mentioning

confidence: 99%

“…Also, poor device characteristics in the case of InSb have been ascribed to nonstoichiometric surfaces caused by certain cleaning procedures prior to the metallization step (5). Auger electron spectroscopy (AES) studies of GaAs (3,4,6) and InSb (7) led to the optimization of cleaning procedures which yielded surfaces with a high degree of stoichiometry and with only small amounts of oxygen and carbon on them.…”

Section: These Studies Indicate T H a T A Stabilization Of C H E M I ...mentioning

confidence: 99%

The Material Properties of Silicon Nitride Formed by Low Energy Ion Implantation

Chiu

Oldham

Hovland

1984

J. Electrochem. Soc.

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This paper reports on silicon nitride formation by low energy implantation of nitrogen or ammonia into silicon. Extensive material investigation on nitrogen-implanted films using various analytical methods, including ellipsometry, chemical etching, transmission electron microscopy (TEM), x-ray photoelectron microscopy (XPS), infrared transmission spectroscopy (IR), and Rutherford backscattering spectroscopy (RBS) is discussed. A new technique to derive the film thickness, density, refractive index, and dielectric constant is developed. This method employs a combination of ellipsometry, capacitance measurement, and nitrogen areal density obtained by RBS. A major finding indicates that the implanted nitride films have a low density compared to CVD nitride. Other material properties are also summarized.Thermal nitridation and nitridation of oxide have been shown to have certain advantages over thermal oxidation (1-3). The thin dielectric obtained is very uniform and exhibits high breakdown strength. In addition, the nitrided layer has a higher dielectric constant than oxide and is impervious to impurity diffusion. The film is also less susceptible to process-induced gate failures (3). With the scaling of the gate dielectric in VLSI, thin nitride is a potential candidate to be investigated.We have shown that thin nitride can be formed by using low energy implantation of N2 in an ion milling machine (4). Since the ion milling machine can deliver a high current density over a large area, the through-put of this process is comparable with single-wafer processing. The implantation of N2 is accompanied by surface sputtering. The sputter-implantation process produces a very uniform layer. Rutherford backseattering spectroscopy (RBS) indicates that the total nitrogen incorporated into the Si surface is about 3.2 -3.5 • 1018 cm -2 at 1.7 keV. The as-implanted layer has a N/Si ratio of 1. A damaged layer about 3 -4 nm thick at the interface extending into the Si substrate is also present. After thermal treatment, the ratio approaches the stoichiometric nitride value of 1.3. The damage to the Si substrate is reduced but not totally removed after annealing at 900~ for 1/2h. A damaged layer about 0.8 nm thick remains. Transmission infrared spectroscopy shows the existence of N-Si bonding in both the as-implanted and the annealed samples. However, the transmission minimum shifts from about 850 to 800 cm -I after heat-treatment. ExperimentsThe substrates used in the studies were (100)-oriented silicon wafers. The native oxide is removed before loading into an ion milling machine (Veeco Microetch System). The system is first pumped down to below 2 • 10 -6 torr and then the implantation is carried out with nitrogen or ammonia at a pressure of 8 • 10 -5 torr. The total dose of the implant is always greater than 0.3 C/cm ~. The samples are then annealed in dry nitrogen or oxidized in wet oxygen. Results Ellipsometry measurements.--Ellipsometry is oftenused to obtain the thickness and the refractive index of a dielectric layer independ...

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Low Energy Nitrogen Implantation into Silicon: Its Material Composition, Oxidation Resistance, and Electrical Characteristics

Cited by 26 publications

References 14 publications

Device Processing Aspects of Ion Beam Nitridation

Device Processing Aspects of Ion Beam Nitridation

Ion Beam Synthesis and Characterization of Crystalline Si3N4 Surface Layers

The Material Properties of Silicon Nitride Formed by Low Energy Ion Implantation

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