Device Processing Aspects of Ion Beam Nitridation

Abstract

Silicon nitride local oxidation masking layers fabricated by low energy nitrogenion implantation into silicon have been employed in the fabrication of n-channel silicon-gate MOSFET's. Processing considerations which are unique to the application of these very thin (10 nm) silicon nitride films are detailed. The effects of oxygen contamination during implantation are described, as are those of subsequent wafer processing steps such as RCA cleaning and oxygen plasma photoresist stripping. It is also shown that resputtered material from the wafer holder can result in iron contamination of the resulting silicon nitride films. Finally, we show that careful attention to these possible problems can produce transistors with reasonable current-voltage characteristics, as compared to conventionally processed devices.) unless CC License in place (see abstract). ecsdl.org/site/terms_use address. Redistribution subject to ECS terms of use (see 138.251.14.35 Downloaded on 2015-03-17 to IP

Thermal Oxidation in Wet Oxygen of Reactive Ion‐Beam Sputter‐Deposited Silicon Nitride Films

“…Chemical vapor deposition (CVD) (10)(11)(12), ionized cluster beam deposition (9,10,13), and partially ionized beam deposition (14,15) have been presented as new processes for metallization. A number of process technologies are now available for metal thin film deposition.…”

“…A number of process technologies are now available for metal thin film deposition. Chemical vapor deposition (CVD) (10)(11)(12), ionized cluster beam deposition (9,10,13), and partially ionized beam deposition (14,15) have been presented as new processes for metallization. We have developed a new thin film formation technology called low kinetic energy particle process (16,19).…”

“…Most of these studies were carried out with atmospheric (10) or low (11) pressure chemically vapor deposited (CVD) silicon nitride films, although oxidation resistance has also been demonstrated for other silicon nitride films obtained by thermal nitridation (12), nitrogen implantation (13,14), and magnetronsputtering (15). Most of these studies were carried out with atmospheric (10) or low (11) pressure chemically vapor deposited (CVD) silicon nitride films, although oxidation resistance has also been demonstrated for other silicon nitride films obtained by thermal nitridation (12), nitrogen implantation (13,14), and magnetronsputtering (15).…”

“…Indeed, many studies (1, 7-9) have reported a thermal oxidation rate, in dry or wet oxygen ambient, much smaller for silicon nitride than for silicon. Most of these studies were carried out with atmospheric (10) or low (11) pressure chemically vapor deposited (CVD) silicon nitride films, although oxidation resistance has also been demonstrated for other silicon nitride films obtained by thermal nitridation (12), nitrogen implantation (13,14), and magnetronsputtering (15). Few of them have been sufficiently accurate to allow the authors to determine the oxidation kinetic law and, as shown, it varies a lot according to the papers.…”