Implantation in Nichthalbleiter

Ryssel, H.; Ruge, Ingolf

doi:10.1007/978-3-663-05668-3_8

Cited by 30 publications

(37 citation statements)

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“…The concentrational dependence of the diffusion coefficient could be approximated by the following function (see, for example, Refs. [3,10,11])…”

Section: Methods Of Solutionmentioning

confidence: 96%

Optimization of Annealing for Decreasing of Depth of System of Serial p–n-Junctions in a Heterostructure

Pankratov¹

2010

Jnl of Comp & Theo Nano

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It has been recently shown, that inhomogeneity of a multilayer structure leads to increasing of sharpness of diffusion-junction and implanted-junction rectifiers, which were formed in the multilayer structure. It has been also shown, that together with increasing of the sharpness homogeneity of impurity distribution in doped area increases. In this paper the both effects (together increasing of sharpness of p-n-junction and increasing of homogeneity of impurity distribution) have been used for production of a system of p-n-junctions (such as bipolar transistor). Annealing time has been optimized for increasing simultaneously the sharpness and the homogeneity.

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“…The concentrational dependence of the diffusion coefficient could be approximated by the following function (see, for example, Refs. [3,10,11])…”

Section: Methods Of Solutionmentioning

confidence: 96%

Optimization of Annealing for Decreasing of Depth of System of Serial p–n-Junctions in a Heterostructure

Pankratov¹

2010

Jnl of Comp & Theo Nano

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“…As follows from the experimental data, we should consider the dependence of D C and D CS on the vacancy and dopant concentration. These dependences can be described using the functions suggested by Gotra [19], Zorin et al [20], and Ryssel and Ruge [21], respectively, 1 × 10 17 1 2…”

Section: Modellingmentioning

confidence: 99%

“…Value of the parameter η (which is equal to an integer value in the range of 1 to 3 [19]) depends on the interaction between dopant atoms and defects [19,22]. The third multipliers in (3) describe vacancy dependences of the diffusion coefficients [20,21]. V ∞ is the equilibrium vacancy distribution.…”

Section: Modellingmentioning

confidence: 99%

Analysis of Erbium and Vanadium Diffusion in Porous Silicon Carbide

Mynbaeva

Pankratov

Мохов

et al. 2012

Advances in Condensed Matter Physics

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Experimental data on diffusion of erbium and vanadium in porous and nonporous silicon carbide at 1700 and 2200°C have been used for modelling diffusion in porous SiC. It is shown that the consideration of pore structure modification under annealing via vacancy redistribution allows for satisfactory description of dopant diffusion. As expected, important contribution to the diffusion in the porous medium is found to be made by the walls of the pores: in SiC, the vacancy surface diffusion coefficient on the walls appears to exceed that in the bulk of the material by an order of magnitude. When thermal treatment transforms pore channels into closed voids, pathways for accelerated diffusion cease to exist and diffusion rates in porous and nonporous SiC become similar.

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“…In the process of ion implantation, elemental ions of choice are accelerated and penetrated into a solid target depending on the energy and slowed down after traversing a certain distance because of collisions with host atoms. The interaction between the host lattice and the energetic ions produces states and structures with metastability through a nonequilibrium process, which cannot be achieved by considering other thermodynamic equilibrium means. ,− For several decades, ion beam implantation has been identified as a process used for modifying the surface of bulk materials as well as improving the semiconductor properties such as to make p-type or n-type materials. − As a result, ion implantation has become an important means for fundamental research as well as applications for functional materials. In addition, material properties can be altered flexibly if proper selection of ion species, energy, and fluencies is made.…”

Section: Introductionmentioning

confidence: 99%

Efficacy of Ion Implantation in Zinc Oxide for Optoelectronic Applications: A Review

Das

Basak

2021

ACS Appl. Electron. Mater.

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Unlike the majority of the silicon-based electronic devices, optoelectronic devices are predominantly made using III–V and II–VI semiconductor compounds and their alloys because of their direct bandgap. Among these, zinc oxide (ZnO) is a multifunctional wide bandgap II–VI semiconductor material that has distinctive properties, such as large excitonic binding energy, high-sensitivity, nontoxicity, and good compatibility, which favors it to be considered for various optoelectronic applications including photoelectrochemical (PEC) water splitting, light-emitting diodes (LEDs), photovoltaics, and photodetectors. Though the research concentrated on ZnO started many decades ago, the renewed interest is rekindled only with the availability of high-quality single-crystal substrates, easy growth techniques of various nanostructures, and reports on p-type ZnO. Therefore, ZnO is being treated as a concentrated research focus during the last two decades by researchers encompassing a vast field starting from luminescent materials, energy storage and conversion, to biomedical sensors, and so on. Ion beam irradiation is a fruitful approach to modify the properties of semiconducting oxides by introducing not only impurities but also defects, strains, structural transitions, and others. The necessity of a timely in-depth and critical review of the progress on ion implantation in ZnO is the origin of this Review, which focuses on the recent implantation efforts in nanostructured ZnO thin films as well as single crystals. In the beginning, with an introduction to the general principles of ion implantation, this Review presents interactions and distribution of implantation-induced defects in ZnO. Next, comprehensive analyses on the influence of ion implantation on the optical, electrical properties, and optoelectronic applications including PEC water splitting and LEDs have been revealed. Most importantly, in each section from a “state-of-the-art” of the domain, some critical connections have been provided between the results of the theoretical simulations of the implanted ion-induced defects and the reported data, which in particular would be able to offer significant insights for both theoretical and experimental research community working with the oxide semiconductors. At the end, a summary with future directions for utilizing ion implantation for achieving ZnO thin-film-based high-performance devices has been presented. By including a sufficient breadth and depth of literature coverage in this Review, we believe that it would also tend to reveal the inconsistencies in the extant body of research.

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Implantation in Nichthalbleiter

Cited by 30 publications

References 0 publications

Optimization of Annealing for Decreasing of Depth of System of Serial <I>p</I>–<I>n</I>-Junctions in a Heterostructure

Optimization of Annealing for Decreasing of Depth of System of Serial <I>p</I>–<I>n</I>-Junctions in a Heterostructure

Analysis of Erbium and Vanadium Diffusion in Porous Silicon Carbide

Efficacy of Ion Implantation in Zinc Oxide for Optoelectronic Applications: A Review

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