Han De scite author profile

In this paper, we discuss scaled silicon bipolar transistor performance for advanced BiCMOS SRAM applications. In particular, we present experimental results of non-self aligned, single poly emitter bipolar transistors with critical dimensions scaled vertically and laterally. We demonstrate the device performance enhancement by properly scaling and show device design tradeoffs with key bipolar device parameters.

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Direct sealing of millimeter-wave transmission windows

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Han De

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Silicon bipolar transistor scaling for advanced BiCMOS SRAM applications

Direct sealing of millimeter-wave transmission windows

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