This paper presents an overview and perspective on processing technologies required for continued scaling of leading edge and emerging semiconductor devices. We introduce the main drivers and trends affecting future semiconductor device scaling and provide examples of emerging devices and architectures that may be implemented within the next 10-20 yr. We summarize multiple active areas of research to explain how future thin film deposition, etch, and patterning technologies can enable 3D (vertical) power, performance, area, and cost scaling. Emerging and new process technologies will be required to enable improved contacts, scaled and future devices and interconnects, monolithic 3D integration, and new computing architectures. These process technologies are explained and discussed with a focus on opportunities for continued improvement and innovation.

In this study, the authors investigated atomic layer deposition (ALD) of B2O3 and BN for conformal, ultrashallow B doping applications and compared the effect of dopant-containing overlayers on sheet resistance (Rs) and B profiles for both types of films subjected to a drive-in thermal anneal. For the deposition of B2O3, tris(dimethylamido)borane and O3 were used as coreactants and for the deposition of BN, BCl3 and NH3 were used as coreactants. Due to the extreme air instability of B2O3 films, physical analysis was performed on B2O3 films, which were capped in-situ with ∼30 Å ALD grown Al2O3 layers. For the BN films, in-situ ALD grown Si3N4 capping layers (∼30 Å) were used for comparison. From spectroscopic ellipsometry, a thickness decrease was observed after 1000 °C, 30 s anneal for the B2O3 containing stack with 60 ALD cycles of B2O3, whereas the BN containing stacks showed negligible thickness decrease after the annealing step, regardless of the number of BN cycles tested. The postanneal reduction in film thickness as well as decrease in Rs for the B2O3 containing stack suggests that the solid state diffusion dopant mechanism is effective, whereas for the BN containing stacks this phenomenon seems to be suppressed. Further clarification of the effectiveness of the B2O3 containing layer compared to the film stacks with BN was evidenced in backside secondary ion mass spectrometry profiling of B atoms. Thus, B2O3 formed by an ALD process and subsequently capped in-situ followed by a drive-in anneal offers promise as a dopant source for ultrashallow doping, whereas the same method using BN seems ineffective. An integrated approach for B2O3 deposition and annealing on a clustered tool also demonstrated controllable Rs reduction without the use of a capping layer.

No abstract

No abstract

we report the implementation of an extrusion method to clad Nd: YAG single crystal fibers with index-matched glasses ( A n = 0.048). A propagation loss coefficient of 0.08 dB/cm was measured for the fundamental mode of a 41-pm-diameter glass-clad fiber laser, an improvement of about one order of magnitude over unclad fibers. Guided clad fiber lasers operated at 1.064 pm with thresholds as low as 0.3-0.5 mW and up to 65-mW CW output power are also reported. The origins of and means of reducing the residual loss are discussed.